Kaymak, NuriyeBayram, OzkanTataroglu, AdemOcak, Sema BilgeOrhan, Elif Oz2024-10-042024-10-0420200957-45221573-482Xhttps://doi.org/10.1007/s10854-020-03517-1http://hdl.handle.net/20.500.12403/3260The electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance-voltage (C/G-V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on -Al2O3/p-Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G- V and C-V measurements of this structure have been performed in 10 kHz-400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density ( D it) and series resistance ( R s) values. The values of D it and R s are dependent on frequency and increase with decreasing frequency. The R s - V graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications.eninfo:eu-repo/semantics/closedAccessInterface-State DensitySeries ResistanceSurface-StatesHigh-QualityFrequencyVoltageSheetsFilmsArticle31129719972510.1007/s10854-020-03517-12-s2.0-85084460956Q2WOS:000531767500001Q3