Özen S.Şenay V.Pat S.Korkmaz Ş.20.04.20192019-04-2020.04.20192019-04-2020150957-4522https://dx.doi.org/10.1007/s10854-015-3027-yhttps://hdl.handle.net/20.500.12403/688Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by thermionic vacuum arc (TVA) technique. The TVA technique is a novel non-reactive plasma technique. The optical properties were determined by Filmetrics F20 interferometer and UV–Vis double beam spectrophotometer. The surface morphology was analyzed using field emission scanning electron microscopy and atomic force microscopy. The mean thickness value was measured as 100 nm by Filmetrics interferometer. The crystalline structure of the produced thin film has a Wurtzite crystal structure (004) as obtained by X-ray diffraction. Hardness value was determined as 14 GPa with the Oliver–Pharr method. The obtained properties are consistent with the values reported in related literature. The findings indicate that the TVA method provides advantages for optical and industrial applications. © 2015, Springer Science+Business Media New York.eninfo:eu-repo/semantics/closedAccessAtomic force microscopyCrystal structureField emission microscopesGallium nitrideGlassInterferometersOptical propertiesScanning electron microscopySubstratesThin filmsVacuum applicationsVacuum technologyX ray diffractionZinc sulfideCrystalline structureDeposition methodsField emission scanning electron microscopyGlass substratesReactive plasmasThermionic vacuum arcThickness valueWurtzite crystal structureDepositionAtomic force microscopyCrystal structureField emission microscopesGallium nitrideGlassInterferometersOptical propertiesScanning electron microscopySubstratesThin filmsVacuum applicationsVacuum technologyX ray diffractionZinc sulfideCrystalline structureDeposition methodsField emission scanning electron microscopyGlass substratesReactive plasmasThermionic vacuum arcThickness valueWurtzite crystal structureDepositionArticle2675060506410.1007/s10854-015-3027-y2-s2.0-84931568215Q2WOS:000358060700072Q2