Kisnisci, Z.Ozel, F.Karadeniz, S.Tugluoglu, N.Ozel, S. S.Yuksel, O. F.2024-10-042024-10-0420240957-45221573-482Xhttps://doi.org/10.1007/s10854-024-12522-7http://hdl.handle.net/20.500.12403/3259In this study, electrical changes in diode parameters of Schottky diodes that made of a kesterite semiconductor were examined under different temperatures. For this aim, Cu2ZnSnSe4 (CZTSe) nanocrystals were fabricated using the hot injection technique, and it was covered by spin coating on an ITO glass substrate. We was introduced the physical and structural analyses using scanning electron microscopy and X-ray spectroscopy. Current-voltage measurements were fulfilled at different temperature (from 100 to 325 K) under dark environment. It was observed that its electrical parameters were strongly affected by temperature.eninfo:eu-repo/semantics/openAccessCapacitance-Voltage CharacteristicsCurrent Conduction MechanismCu2znsns4 Thin-FilmsI-V-TSolar-CellsTemperature-DependenceCurrent TransportBarrier DiodesCharacteristic ParametersOptical-PropertiesArticle351110.1007/s10854-024-12522-72-s2.0-85190386837Q2WOS:001205034100001N/A