Pat S.Özen S.Şenay V.Korkmaz Ş.20.04.20192019-04-2020.04.20192019-04-2020170361-5235https://dx.doi.org/10.1007/s11664-016-4861-2https://hdl.handle.net/20.500.12403/536Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance. © 2016, The Minerals, Metals & Materials Society.eninfo:eu-repo/semantics/closedAccessMg-doped GaAsOptical propertiessurface propertiesAtomic force microscopyDepositionDoping (additives)Energy dispersive spectroscopyGallium arsenideNanocrystalline materialsNanocrystalsOptical propertiesScanning electron microscopySemiconducting galliumSemiconductor device manufactureSurface propertiesThin filmsVacuum applicationsVacuum technologyX ray diffraction analysisX ray spectroscopyCrystalline directionsEnergy dispersive X ray spectroscopyGaAsNanocrystalline sampleNanocrystalline thin filmsSemiconductor technologySurface characteristicsVisible spectrophotometriesIII-V semiconductorsMg-doped GaAsOptical propertiessurface propertiesAtomic force microscopyDepositionDoping (additives)Energy dispersive spectroscopyGallium arsenideNanocrystalline materialsNanocrystalsOptical propertiesScanning electron microscopySemiconducting galliumSemiconductor device manufactureSurface propertiesThin filmsVacuum applicationsVacuum technologyX ray diffraction analysisX ray spectroscopyCrystalline directionsEnergy dispersive X ray spectroscopyGaAsNanocrystalline sampleNanocrystalline thin filmsSemiconductor technologySurface characteristicsVisible spectrophotometriesIII-V semiconductorsArticle46110.1007/s11664-016-4861-22-s2.0-84984604092Q3WOS:000391126900001Q3