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Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Springer New York LLC, 2015)

In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were ...

Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)

Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Springer New York LLC, 2015)

Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by ...

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Springer New York LLC, 2015)

Using a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films ...

Some physical properties of the SiGe thin film coatings by thermionic vacuum arc (TVA)

Özen S.; Pat S.; Şenay V.; Korkmaz Ş.; Geçici B. (American Scientific Publishers, 2015)

SiGe thin films were deposited on glass and PET substrate by the thermionic vacuum arc (TVA) method for the first time. TVA is an anodic plasma generator which works in high vacuum conditions. Highly pure and quality films ...