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Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

Pat S.; Özen S.; Şenay V.; Korkmaz Ş. (Springer New York LLC, 2017)

Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...

The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc

Özen S.; Korkmaz Ş.; Şenay V.; Pat S. (Springer New York LLC, 2017)

This study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene ...

The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc

Özen S.; Pat S.; Şenay V.; Korkmaz Ş. (Elsevier Ltd, 2017)

In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate ...

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (John Wiley and Sons Inc., 2016)

The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between ...

Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Springer New York LLC, 2015)

In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were ...

Investigation on the morphology and surface free energy of the AlGaN thin film

Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Elsevier Ltd, 2015)

The purpose of this paper is to analyze surface properties of AlGaN thin film produced using thermionic vacuum arc technique. Thermionic vacuum arc is an alternative deposition technique for GaN thin films that produces ...

Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)

Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Springer New York LLC, 2015)

Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by ...

Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Springer New York LLC, 2015)

Using a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films ...

GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)

Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Elsevier Ltd, 2015)

In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...

Some physical properties of the SiGe thin film coatings by thermionic vacuum arc (TVA)

Özen S.; Pat S.; Şenay V.; Korkmaz Ş.; Geçici B. (American Scientific Publishers, 2015)

SiGe thin films were deposited on glass and PET substrate by the thermionic vacuum arc (TVA) method for the first time. TVA is an anodic plasma generator which works in high vacuum conditions. Highly pure and quality films ...