Basit öğe kaydını göster

dc.contributor.authorBayram O.
dc.contributor.authorSener E.
dc.contributor.authorİgman E.
dc.contributor.authorSimsek O.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:42:58Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:42:58Z
dc.date.issued2019
dc.identifier.issn0957-4522
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-018-00620-2
dc.identifier.urihttps://hdl.handle.net/20.500.12403/314
dc.description.abstractIn this study, it was aimed to grow Nickel doped (0.0 at.%, 0.16 at.%, 0.20 at. % and 0.24 at. %) Zinc Oxide (NZO) thin films on quartz substrates using Magnetron Sputtering technique. NZO thin films were obtained at a temperature of 450 °C, a pressure of 480 m Torr and a deposition time of 30 min. Co-sputtering process for both Ni and ZnO target was performed using two separate power sources. The DC power of the Ni target material was 20, 30 and 40 W, respectively while the radio frequency (RF) power of the Zinc oxide (ZnO) target material was set to 150 W. Using XRD analysis, thin films were found to have polycrystalline morphology, and the average crystallite size changed significantly depending on the increased Ni doping level. The optical Transmittance of the thin films was greater than 90% in the visible region (550 nm), and this value tends to decrease slightly by Ni doping. The optical band gap (E g ) firstly decreased and then slightly increased with the Nickel doping ratio and these values were found to be 3.23 eV, 3.11 eV and 3.15 eV, respectively, with increase of Ni doping. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.language.isoengen_US
dc.publisherSpringer New York LLC
dc.relation.isversionof10.1007/s10854-018-00620-2
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCobalt compounds
dc.subjectCrystallite size
dc.subjectEnergy gap
dc.subjectII-VI semiconductors
dc.subjectNickel oxide
dc.subjectOptical properties
dc.subjectOxide films
dc.subjectSemiconductor doping
dc.subjectSputtering
dc.subjectZinc oxide
dc.subjectDeposition time
dc.subjectDoped zinc oxide thin films
dc.subjectPolycrystalline morphology
dc.subjectQuartz substrate
dc.subjectRadio frequency power
dc.subjectTarget materials
dc.subjectVisible region
dc.subjectZinc oxide (ZnO)
dc.subjectThin films
dc.subjectCobalt compounds
dc.subjectCrystallite size
dc.subjectEnergy gap
dc.subjectII-VI semiconductors
dc.subjectNickel oxide
dc.subjectOptical properties
dc.subjectOxide films
dc.subjectSemiconductor doping
dc.subjectSputtering
dc.subjectZinc oxide
dc.subjectDeposition time
dc.subjectDoped zinc oxide thin films
dc.subjectPolycrystalline morphology
dc.subjectQuartz substrate
dc.subjectRadio frequency power
dc.subjectTarget materials
dc.subjectVisible region
dc.subjectZinc oxide (ZnO)
dc.subjectThin films
dc.titleInvestigation of structural, morphological and optical properties of Nickel-doped Zinc oxide thin films fabricated by co-sputteringen_US
dc.typearticleen_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentBayburt Universityen_US
dc.contributor.authorID55523238500
dc.contributor.authorID57205334785
dc.contributor.authorID57201333718
dc.contributor.authorID7004622888
dc.identifier.volume30
dc.identifier.issue4
dc.identifier.startpage3452
dc.identifier.endpage3458
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


Bu öğenin dosyaları:

DosyalarBoyutBiçimGöster

Bu öğe ile ilişkili dosya yok.

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster