Basit öğe kaydını göster

Zn/ZnSe thin films deposition by RF magnetron sputtering

dc.contributor.authorYudar H.H.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:21Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:21Z
dc.date.issued2017
dc.identifier.issn0957-4522
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-016-5866-6
dc.identifier.urihttps://hdl.handle.net/20.500.12403/521
dc.description.abstractIn this paper, Zn/ZnSe thin films were deposited on glass substrates by RF magnetron sputtering system. XRD analyses were done. Zn and ZnSe phases were obtained. Miller indices of obtained Zn phases were detected in (320), (620) and (112) crystal formation. For the ZnSe phases, only one peak of (110)/(220) was observed. The surface morphology of the samples was investigated by an atomic force microscopy tools. It found that average roughness of the films was increased by raised RF power. The thin films around 80 % of high transmittance were measured. The band gap values were calculated as to be ~2.80 eV by the Cauchy model. The calculated refractive indices values were approximately 2.25 by a relation between the refractive index and the band gap. © 2016, Springer Science+Business Media New York.en_US
dc.language.isoengen_US
dc.publisherSpringer New York LLC
dc.relation.isversionof10.1007/s10854-016-5866-6
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy
dc.subjectDeposition
dc.subjectEnergy gap
dc.subjectMagnetron sputtering
dc.subjectRefractive index
dc.subjectSubstrates
dc.subjectZinc
dc.subjectBand-gap values
dc.subjectCauchy model
dc.subjectCrystal formation
dc.subjectGlass substrates
dc.subjectHigh transmittance
dc.subjectMiller indices
dc.subjectrf-Magnetron sputtering
dc.subjectThin films deposition
dc.subjectThin films
dc.subjectAtomic force microscopy
dc.subjectDeposition
dc.subjectEnergy gap
dc.subjectMagnetron sputtering
dc.subjectRefractive index
dc.subjectSubstrates
dc.subjectZinc
dc.subjectBand-gap values
dc.subjectCauchy model
dc.subjectCrystal formation
dc.subjectGlass substrates
dc.subjectHigh transmittance
dc.subjectMiller indices
dc.subjectrf-Magnetron sputtering
dc.subjectThin films deposition
dc.subjectThin films
dc.titleZn/ZnSe thin films deposition by RF magnetron sputteringen_US
dc.typearticleen_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentBayburt Universityen_US
dc.contributor.authorID57189904041
dc.contributor.authorID9274843500
dc.contributor.authorID7003415405
dc.contributor.authorID55897767500
dc.contributor.authorID55897416100
dc.identifier.volume28
dc.identifier.issue3
dc.identifier.startpage2833
dc.identifier.endpage2837
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


Bu öğenin dosyaları:

DosyalarBoyutBiçimGöster

Bu öğe ile ilişkili dosya yok.

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster