Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method
In this paper, heavily C-doped GaN samples were deposited on glass and PET substrates by the thermionic vacuum arc (TVA) method, for the first time. Microstructure, surface and optical properties of the carbon-doped GaN samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy, atomic force microscopy, and UV–Vis spectrophotometer. According to XRD pattern, fullerene (C60) structures were able to deposit in doped samples, for the first time. The fullerene structures were detected at heavily carbon-doped GaN. The obtained band gap changes of heavily carbon-doped GaN samples are determined. The band gap of CGaN on PET substrate decreased to a lower value, about 100 meV. The band gaps were shifted to the lowest wavelengths towards the edge of the UV region by heavily doped carbon. (002) and (004) peaks for GaN were also detected. © 2016 Elsevier Ltd
Showing items related by title, author, creator and subject.
The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between ...
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...
Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in nanostructured form. Especially, nanoparticles show ferromagnetic properties at room temperature. In this paper, Ti-doped effects on GaN ...