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Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method

Date

2016

Author

Pat S.
Özen S.
Şenay V.
Korkmaz Ş.
Şimşek V.

Metadata

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Abstract

A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000–3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297–302, 2016. © 2015 Wiley Periodicals, Inc. © Wiley Periodicals, Inc.

Source

Scanning

Volume

38

Issue

4

URI

https://dx.doi.org/10.1002/sca.21269
https://hdl.handle.net/20.500.12403/610

Collections

  • Scopus İndeksli Yayınlar Koleksiyonu [570]
  • WoS İndeksli Yayınlar Koleksiyonu [372]

Related items

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  • Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method 

    Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Elsevier Ltd, 2016)
    In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast ...
  • Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique 

    Pat S.; Özen S.; Şenay V.; Korkmaz Ş. (Springer New York LLC, 2017)
    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...
  • Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method 

    Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Taylor and Francis Inc., 2019)
    Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in nanostructured form. Especially, nanoparticles show ferromagnetic properties at room temperature. In this paper, Ti-doped effects on GaN ...



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