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Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method

Date

2016

Author

Pat S.
Korkmaz Ş.
Özen S.
Şenay V.

Metadata

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Abstract

In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast deposition process for the other growth method such as metal organic chemical vapor deposition, molecular beam epitaxy, molecular organic molecular beam epitaxy. The smallest grain size of GaAs and doped GaAs were obtained by carbon doping process. Mean crystalline size and height of crystalline size were found to be 3.4 nm and 4 nm, respectively. Crystal direction was found to be (022) plane and (024) plane for the sample at 45.322° and 75.060°, respectively. The production process and obtained results show that used methods is very simple, low cost, eco friendly and very fast method for the carbon doped GaAs. © 2015 Elsevier B.V.

Source

Journal of Alloys and Compounds

Volume

657

URI

https://dx.doi.org/10.1016/j.jallcom.2015.10.150
https://hdl.handle.net/20.500.12403/641

Collections

  • Scopus İndeksli Yayınlar Koleksiyonu [570]
  • WoS İndeksli Yayınlar Koleksiyonu [372]

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  • The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc 

    Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (John Wiley and Sons Inc., 2016)
    The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between ...
  • GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA) 

    Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Elsevier Ltd, 2015)
    In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...
  • Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method 

    Pat S.; Özen S.; Şenay V.; Korkmaz Ş.; Şimşek V. (John Wiley and Sons Inc., 2016)
    A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the ...



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