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Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc

Date

2015

Author

Pat S.
Korkmaz Ş.
Özen S.
Şenay V.

Metadata

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Abstract

Using a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info. © 2015, Springer Science+Business Media New York.

Source

Journal of Materials Science: Materials in Electronics

Volume

26

Issue

4

URI

https://dx.doi.org/10.1007/s10854-015-2670-7
https://hdl.handle.net/20.500.12403/729

Collections

  • Scopus İndeksli Yayınlar Koleksiyonu [570]
  • WoS İndeksli Yayınlar Koleksiyonu [372]

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  • Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA) 

    Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Springer New York LLC, 2015)
    Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by ...
  • Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method 

    Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Taylor and Francis Inc., 2019)
    Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in nanostructured form. Especially, nanoparticles show ferromagnetic properties at room temperature. In this paper, Ti-doped effects on GaN ...
  • Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc 

    Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (Springer New York LLC, 2015)
    In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were ...



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