Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc
Özet
In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were examined. The deposited GaAs:Sn structures were characterized via both atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). In this context, current research aims to reach a conclusion about the structure of the produced GaAs:Sn film by combining AFM, FESEM and energy dispersive X-ray spectroscopy data. From the optical investigation, the refractive index and extinction coefficient values for the produced film were obtained as 3.68 and 0.03 at the wavelength of 632.8 nm, respectively. The direct optical band gap energy of the deposited thin film was determined by two different models. Estimated optical band gap values were compared with each other. The results showed that TVA technique is suitable for a GaAs:Sn coating on glass substrate. © 2015, Springer Science+Business Media New York.
Kaynak
Journal of Materials Science: Materials in ElectronicsCilt
26Sayı
11Koleksiyonlar
İlgili Öğeler
Başlık, yazar, küratör ve konuya göre gösterilen ilgili öğeler.
-
Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
Pat S.; Özen S.; Şenay V.; Korkmaz Ş. (Springer New York LLC, 2017)Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ... -
A study on some physical properties of a Pb-doped GaAs thin film produced by thermionic vacuum arc
Şenay V.; Özen S.; Pat S.; Korkmaz Ş. (Elsevier Ltd, 2017)A 155 nm Pb-doped GaAs thin film was deposited on a glass substrate by means of the thermionic vacuum arc technique in 30 s using GaAs and Pb pellets as source materials. Tools and techniques such as an optical reflectometer, ... -
GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)
Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Elsevier Ltd, 2015)In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...