Browsing by Subject "III/V doped semiconductor"
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Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method
(John Wiley and Sons Inc., 2016)A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the ...