The substrate effect on Ge doped GaN thin films coated by thermionic vacuum arc
This study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene terephthalate by using thermionic vacuum arc technique. Gallium nitride and germanium pellets were used in the thin film production. Reflectance, refractive index and thicknesses of Ge doped GaN thin films were measured by optical interferometer using Cauchy model for fitting. The transmittances were determined in the wavelength range between 200 and 1000 nm by using UV–Vis double beam spectrophotometer. The optical Tauc method was used to determine the band gap energies of produced thin films. Surface morphologies of produced thin films were characterized by atomic force microscopy and also field emission scanning electron microscopy. In conclusion, the substrate effect on the optical and morphological properties of the produced thin films was observed. © 2016, Springer Science+Business Media New York.
SourceJournal of Materials Science: Materials in Electronics
Showing items related by title, author, creator and subject.
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...
The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between ...
Comparisons of surface and optical properties of the heavily carbon-doped GaN nanocrystalline films deposited by thermionic vacuum arc method In this paper, heavily C-doped GaN samples were deposited on glass and PET substrates by the thermionic vacuum arc (TVA) method, for the first time. Microstructure, surface and optical properties of the carbon-doped GaN ...