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dc.contributor.authorŞenay V.
dc.contributor.authorÖzen S.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:37Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:37Z
dc.date.issued2016
dc.identifier.issn0925-8388
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2015.12.154
dc.identifier.urihttps://hdl.handle.net/20.500.12403/622
dc.description.abstractA 80 nm 2 at% Co-doped GaAs thin film was deposited on a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique using GaAs and Co pellets as source materials. Tools and techniques such as an optical reflectometer, XRD, UV-VIS-NIR spectrophotometer, FESEM, EDX, and AFM were employed to investigate some of the physical properties of the produced film. From the optical investigations, the refractive index at 632.8 nm and optical band gap of the film were determined to be 3.60 and 1.42 eV respectively. XRD characterization indicated that the film contained GaAs and Co phases. A uniform surface morphology with fine grain covering the entire surface was observed through the FESEM and AFM studies, while 30 nm grain size and 2.72 nm root mean square roughness were obtained. The EDX analysis also confirmed the presence of Ga, As and Co in the film. © 2015 Elsevier B.V. All rights reserved.en_US
dc.language.isoengen_US
dc.publisherElsevier Ltd
dc.relation.isversionof10.1016/j.jallcom.2015.12.154
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs
dc.subjectThermionic vacuum arc
dc.subjectXRD
dc.subjectCobalt
dc.subjectEnergy gap
dc.subjectGallium arsenide
dc.subjectReflectometers
dc.subjectRefractive index
dc.subjectSemiconducting gallium
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs
dc.subjectThermionic vacuum arc
dc.subjectXRD
dc.subjectOptical films
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs
dc.subjectThermionic vacuum arc
dc.subjectXRD
dc.subjectCobalt
dc.subjectEnergy gap
dc.subjectGallium arsenide
dc.subjectReflectometers
dc.subjectRefractive index
dc.subjectSemiconducting gallium
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectAFM
dc.subjectFESEM
dc.subjectGaAs
dc.subjectThermionic vacuum arc
dc.subjectXRD
dc.subjectOptical films
dc.titleOptical, structural, morphological and compositional characterization of a Co-doped GaAs semiconducting thin film produced by thermionic vacuum arcen_US
dc.typearticleen_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.contributor.departmentBayburt Universityen_US
dc.contributor.authorID55897416100
dc.contributor.authorID55897767500
dc.contributor.authorID9274843500
dc.contributor.authorID7003415405
dc.identifier.volume663
dc.identifier.startpage829
dc.identifier.endpage833
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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