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dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:46Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:46Z
dc.date.issued2015
dc.identifier.issn0957-4522
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-015-3581-3
dc.identifier.urihttps://hdl.handle.net/20.500.12403/676
dc.description.abstractIn this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were examined. The deposited GaAs:Sn structures were characterized via both atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). In this context, current research aims to reach a conclusion about the structure of the produced GaAs:Sn film by combining AFM, FESEM and energy dispersive X-ray spectroscopy data. From the optical investigation, the refractive index and extinction coefficient values for the produced film were obtained as 3.68 and 0.03 at the wavelength of 632.8 nm, respectively. The direct optical band gap energy of the deposited thin film was determined by two different models. Estimated optical band gap values were compared with each other. The results showed that TVA technique is suitable for a GaAs:Sn coating on glass substrate. © 2015, Springer Science+Business Media New York.en_US
dc.language.isoengen_US
dc.publisherSpringer New York LLC
dc.relation.isversionof10.1007/s10854-015-3581-3
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy
dc.subjectEnergy dispersive spectroscopy
dc.subjectEnergy gap
dc.subjectGallium alloys
dc.subjectGallium arsenide
dc.subjectGlass
dc.subjectOptical band gaps
dc.subjectOptical properties
dc.subjectRefractive index
dc.subjectScanning electron microscopy
dc.subjectSemiconducting gallium
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectX ray spectroscopy
dc.subjectEnergy dispersive X ray spectroscopy
dc.subjectExtinction coefficients
dc.subjectField emission scanning electron microscopes
dc.subjectGlass substrates
dc.subjectOptical band gap energy
dc.subjectOptical investigation
dc.subjectShort periods
dc.subjectThermionic vacuum arc
dc.subjectTin
dc.subjectAtomic force microscopy
dc.subjectEnergy dispersive spectroscopy
dc.subjectEnergy gap
dc.subjectGallium alloys
dc.subjectGallium arsenide
dc.subjectGlass
dc.subjectOptical band gaps
dc.subjectOptical properties
dc.subjectRefractive index
dc.subjectScanning electron microscopy
dc.subjectSemiconducting gallium
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectX ray spectroscopy
dc.subjectEnergy dispersive X ray spectroscopy
dc.subjectExtinction coefficients
dc.subjectField emission scanning electron microscopes
dc.subjectGlass substrates
dc.subjectOptical band gap energy
dc.subjectOptical investigation
dc.subjectShort periods
dc.subjectThermionic vacuum arc
dc.subjectTin
dc.titleCharacterization of a fast grown GaAs:Sn thin film by thermionic vacuum arcen_US
dc.typearticleen_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentBayburt Universityen_US
dc.contributor.authorID55897767500
dc.contributor.authorID55897416100
dc.contributor.authorID9274843500
dc.contributor.authorID7003415405
dc.identifier.volume26
dc.identifier.issue11
dc.identifier.startpage8983
dc.identifier.endpage8987
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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