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Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc

Date

2015

Author

Şenay V.
Özen S.
Pat S.
Korkmaz Ş.

Metadata

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Abstract

Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, XRD, FESEM, AFM, Hall effect measurement, and diiodomethane, ethylene glycol, formamide, and water contact angle measurements were employed to investigate some of the physical properties of the produced film. XRD characterization indicated that the film contained GaAs (hexagonal system in atomic ratio of 1) and SiAs (monoclinic system in atomic ratio of 1) phases. The grain size obtained from Scherrer's Formula was in the range of 30-40 nm. The AFM micrographs showed the film topography, revealing a surface root mean square roughness of 14.5 nm and average height of 48.3 nm. From the wetting experiments, it was found that the contact angle value is strongly dependent on the liquid used. © 2015 Elsevier Ltd.

Source

Vacuum

Volume

119

URI

https://dx.doi.org/10.1016/j.vacuum.2015.05.030
https://hdl.handle.net/20.500.12403/691

Collections

  • Scopus İndeksli Yayınlar Koleksiyonu [570]
  • WoS İndeksli Yayınlar Koleksiyonu [372]

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    Özen S.; Şenay V.; Pat S.; Korkmaz Ş. (John Wiley and Sons Inc., 2016)
    The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between ...
  • GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA) 

    Pat S.; Korkmaz Ş.; Özen S.; Şenay V. (Elsevier Ltd, 2015)
    In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...
  • Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique 

    Pat S.; Özen S.; Şenay V.; Korkmaz Ş. (Springer New York LLC, 2017)
    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...



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