Yazar "Korkmaz, Sadan" seçeneğine göre listele

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    DIRECT AND FAST GROWTH OF A SI:GAAS THIN FILM BY MEANS OF THERMIONIC VACUUM ARC (TVA)
    (IEEE, 2015) Senay, Volkan; Ozen, Soner; Pat, Suat; Korkmaz, Sadan
    [Abstract Not Available]
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    The Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method
    (Amer Scientific Publishers, 2016) Pat, Suat; Korkmaz, Sadan; Ozen, Soner; Senay, Volkan
    This study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.
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    MO DOPED GAN THIN FILM GROWTH USING THERMIONIC VACUUM ARC (TVA)
    (IEEE, 2015) Ozen, Soner; Pat, Suat; Korkmaz, Sadan; Senay, Volkan
    [Abstract Not Available]
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    Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc
    (Amer Scientific Publishers, 2015) Senay, Volkan; Ozen, Soner; Pat, Suat; Korkmaz, Sadan
    A 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.
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    SOLID STATE BATTERY MANUFACTURING WITH THERMIONIC VACUUM ARC AND RF SPUTTERING
    (IEEE, 2015) Pat, Suat; Ozen, Soner; Senay, Volkan; Korkmaz, Sadan; Pat, Zerrin
    [Abstract Not Available]
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    Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc
    (Springer, 2016) Pat, Suat; Senay, Volkan; Ozen, Soner; Korkmaz, Sadan
    Mo-doped and undoped GeGaAs layers have been deposited by the thermionic vacuum arc (TVA) method, an alternative, fast plasma deposition technique. The thicknesses of the deposited layers were identical. The surface, mechanical, and optical properties of the deposited layers were studied to determine the influence of Mo doping on GeGaAs. The transparency of GeGaAs was shifted towards the near-infrared region by Mo doping. Bandgap values shifted by approximately 0.3 eV. In other words, the bandgap value of Mo-doped GeGaAs was nearly equal to that of GaAs materials. The average roughness and grain size of the Mo-doped material were smaller than for the GeGaAs layer. The particle distributions of the Mo-doped and undoped GeGaAs were almost perfect Gaussians. However, the mean height of the Mo-doped GeGaAs grains was six times that for undoped GeGaAs. The surface was homogeneous. The Mo-doped layer showed greater absorbance than the GeGaAs material. The produced Mo-doped sample showed hybrid properties.