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    Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode
    (Iop Publishing Ltd, 2021) Kutluoglu, Esra Efil; Orhan, Elif Oz; Tataroglu, Adem; Bayram, Ozkan
    Researches on layered materials such as graphene have attracted lots of attention recently. It has been shown that these materials have make a junction with many semiconductor materials that behave like Schottky diodes and have rectifying characteristics. The comprehension of its fabrication process and properties are a critical need toward graphene-based integrated electronics. The purpose of this study is to find out the current-voltage (I-V) performance of Bilayer Graphene (BLGr) based heterostructure fabricated on Al2O3/p-Si, and the effect of BLGr on diode parameters. Graphene has been grown on copper (Cu) foil by Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by using the polymethyl methacrylate (PMMA) wet transfer method. Raman analysis has been performed to obtain supportive information about CVD synthesized graphene film. The I-V plot of the diode exhibited two linear regions named Region 1 (0.08-0.19 V) and Region 2 (0.21-0.40 V). The double-exponential I-V behavior of the diode has been analyzed. The diode characteristics such as barrier height (phi(B0)), series resistance (R-s), and ideality factor (n) have been calculated by using thermionic emission (TE), Norde, and Cheung methods. Especially, the values of the barrier height were compared with one another. It was found that they are in good agreement. Additionally, current conduction mechanisms of the diode were investigated using the forward bias ln(I) versus ln (V) plot. At lower and higher forward bias regions, the conduction mechanisms were determined as ohmic behavior and trap charge limiting current mechanism (TCLC), respectively.
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    Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode
    (Elsevier, 2021) Kutluoglu, Esra Efil; Orhan, Elif Oz; Bayram, Ozkan; Ocak, Sema Bilge
    The purpose of this study is to determine the effects of gamma (gamma)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by the wet transfer method. After Al/Graphene/Al2O3/p-Si structure has been exposed to 30 kGy and 60 kGy gamma-ray irradiation, capacitance, and conductance measurements have been accomplished at 300 K. Electrical parameters have been compared before and after gamma-ray irradiation for 50 kHz and 500 kHz. These results have been confirmed that capacitance and conductance values have increased after gamma-ray irradiation and, have decreased when the radiation dose was increased from 30 kGy to 60 kGy. It has been observed that series resistance has decreased after 30 kGy radiation dose and has increased with increasing radiation dose.