Yazar "Muglu, Gunay Merhan" seçeneğine göre listele

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    Evaluation of the optical, structural, and morphological characteristics of a Sn-doped ?-Fe2O3 thin film fabricated using RF and DC magnetron Co-sputtering technique
    (Elsevier Sci Ltd, 2025) Salari, Maryam Abdolahpour; Senay, Volkan; Muglu, Gunay Merhan; Saritas, Sevda; Kundakci, Mutlu
    In this research, a Sn-doped hematite (alpha-Fe2O3) thin film on a glass substrate was synthesized using DC and RF magnetron sputtering techniques, and the physical features of the film were analyzed in detail. This study, conducted to investigate the effects of Sn doping on the hematite structure, evaluated the optical and morphological attributes of the thin film using advanced characterization techniques such as UV-VIS spectroscopy, Raman spectroscopy, XRD, SEM, EDS, and AFM. The optical band gap was determined from absorption measurement and calculated to be 2.12 eV. Raman spectroscopy results revealed various characteristic peaks between 100 cm(-1) and 1500 cm(-1). A strong (214) diffraction peak confirms the enhanced hematite phase formation in the thin film. The crystallite size of the Sn-doped thin film, calculated via Scherrer's formula, is 20 nm. SEM images showed that the thin film exhibited a smooth and homogeneous surface morphology on the glass substrate. According to the EDS results, the atomic doping ratio of Sn in Fe2O3 is 2.84 %. Additionally, AFM analysis confirmed that the Sn-doped alpha-Fe2O3 thin film had a smooth surface, as indicated by a low RMS (Root Mean Square) roughness value of 8.11 nm. These properties suggest that the thin film could be suitable for optoelectronic applications. The study emphasizes the potential of Sn-doped alpha-Fe2O3 thin films, particularly for optoelectronic and photocatalytic devices, and underscores the need for further investigation of these materials. Furthermore, it was concluded that these materials should be considered in a broader context for their potential use in various technological applications.
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    Optical, structural, morphological, and gas sensing properties of Mg-doped ?-Fe2O3 thin films deposited by RF and DC magnetron Co-sputtering technique
    (Elsevier, 2024) Saritas, Sevda; Muglu, Gunay Merhan; Turgut, Erdal; Kundakci, Mutlu; Yildirim, Muhammet; Senay, Volkan
    In this research, Mg -doped hematite (alpha-Fe2O3) thin films with different Mg -doping concentrations were synthesized on glass substrates using the direct current (DC) and radio frequency (RF) magnetron co -sputtering technique, and the changes of some physical properties due to the concentration of the dopant were investigated. The optical, structural, morphological, and elemental properties of the obtained Mg -doped alpha-Fe2O3 thin films were determined by X-ray diffraction (XRD) analysis, UV-Vis spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), dispersive X-ray spectroscopy and atomic force microscopy (AFM). XRD analysis revealed that the investigated thin films have a rhombohedral crystal structure. The deposition of films at different DC sputtering voltages caused significant variations in stoichiometry and nanostructure. The thin films' band gap energy values were estimated based on absorption measurements, and results ranged from 2.15 eV to 2.69 eV. Raman peaks were observed between 218 cm(-1) and 1305 cm(-1). The thin films exhibit uniform surface morphology throughout the substrate according to the SEM images. The low RMS roughness values obtained from AFM images showed that the surfaces of Mg:Fe2O3 thin films are smooth. The Mg -doped alpha-Fe(2)O(3 )thin film doped by 150 W DC voltage exhibited a good gas -sensing response at 300 C. A remarkably quick response/ recovery time was achieved.
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    The structural, optical, topographical, and H2 sensing characteristics of a Zn-doped Fe2O3 thin layer deposited via DC & RF magnetron co-sputtering method
    (Springer, 2025) Muglu, Gunay Merhan; Senay, Volkan; Saritas, Sevda; Salari, Maryam Abdolahpour; Kundakci, Mutlu
    In this study, a Zn-doped iron oxide layer was deposited onto a microscope slide using the magnetron co-sputtering technique with direct current (DC) and radio frequency (RF) sources. We comprehensively characterized the resulting Zn-doped Fe2O3 thin layer, employing techniques such as XRD, Raman spectroscopy, UV-VIS spectrophotometry, SEM, EDX, & AFM. XRD examination showed the nanocrystalline structure in the thin layer under investigation. Based on recorded absorption data, the band gap energy value calculation resulted in a value of 2.23 eV for the thin film. Raman spectroscopy identified peaks possessing Raman shifts from 100 to 1400 cm-1. SEM investigation illustrated a consistently uniform thin film surface characteristic throughout the substrate. Additionally, the AFM study disclosed a small RMS roughness value, indicative of an unrough surface for the Zn: Fe2O3 thin layer. The Fe2O3 thin film doped with Zn employing a 30 W DC voltage demonstrated effective hydrogen sensing capability at 300 degrees C, achieving notable response and recovery time. This work presents a novel application of Zn-doped Fe2O3 thin films as highly sensitive and stable hydrogen sensors, tailored for high-temperature environments. The unique combination of nanocrystalline structure and Zn doping optimizes the material's electronic properties, enhancing its responsiveness to hydrogen gas. This approach offers a scalable, cost-effective pathway for developing advanced sensor technologies suited to environmental monitoring, industrial safety, and hazardous gas detection, making it a valuable addition to the field of gas-sensing materials.