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Öğe DIRECT AND FAST GROWTH OF A SI:GAAS THIN FILM BY MEANS OF THERMIONIC VACUUM ARC (TVA)(IEEE, 2015) Senay, Volkan; Ozen, Soner; Pat, Suat; Korkmaz, Sadan[Abstract Not Available]Öğe The Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method(Amer Scientific Publishers, 2016) Pat, Suat; Korkmaz, Sadan; Ozen, Soner; Senay, VolkanThis study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.Öğe MO DOPED GAN THIN FILM GROWTH USING THERMIONIC VACUUM ARC (TVA)(IEEE, 2015) Ozen, Soner; Pat, Suat; Korkmaz, Sadan; Senay, Volkan[Abstract Not Available]Öğe Optical and surface properties of ZnN thin films manufactured by radio frequency reactive magnetron sputtering(Elsevier Gmbh, 2019) Senay, Volkan; Ozen, Soner; Aydogmus, TunaZnN is a relatively new material and its physical properties are not yet well studied. In this research, ZnN thin films having different thickness values were deposited on glass substrates by means of radio frequency (RF) reactive magnetron sputtering technique at room temperature and some physical properties of ZnN thin films were investigated by several techniques. UV-vis spectrophotometer and reflectometer were employed to investigate the optical properties of the produced thin films. The surface properties were investigated by using tensiometer and atomic force microscope (AFM). The effects of film thickness on the optical and surface properties of ZnN thin films were discussed. The refractive index and band gap values were found to be dependent on thickness of ZnN thin films. The AFM investigations indicated that the surfaces of the films are compact and smooth. From the wetting experiments, it was found that the surfaces of the films are hydrophobic and surface free energy values are low as reported in literature.Öğe Optical, morphological and nano-mechanical properties of chromium oxide thin films fabricated by radio frequency (RF) magnetron sputtering(Elsevier Gmbh, 2020) Ozen, Soner; Senay, VolkanIn this research, two transparent chromium oxide thin films having different thickness values were simultaneously deposited on glass substrates by adjusting target-substrate distance by means of radio frequency (RF) magnetron sputtering technique. The effect of film thickness on optical, morphological and nano-mechanical properties of the produced thin films were analyzed by using UV-VIS spectrophotometer, interferometer, tensiometer and atomic force microscope. The transmittance and absorbance of the films were measured in the incident photon wavelength range of 300-1000 nm. The optical energy band gap value of the produced thin films was estimated to be approximately 4 eV from the obtained absorbance data via Tauc's method. According to the results obtained from nano-mechanical tests, the produced thin films were highly scratch resistant. From the wetting experiments, it was found that the surfaces of the films were hydrophilic.Öğe Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc(Amer Scientific Publishers, 2015) Senay, Volkan; Ozen, Soner; Pat, Suat; Korkmaz, SadanA 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.Öğe SOLID STATE BATTERY MANUFACTURING WITH THERMIONIC VACUUM ARC AND RF SPUTTERING(IEEE, 2015) Pat, Suat; Ozen, Soner; Senay, Volkan; Korkmaz, Sadan; Pat, Zerrin[Abstract Not Available]Öğe Some physical properties of a Li4Ti5O12 thin film electrode manufactured by radio frequency magnetron sputtering(Edp Sciences S A, 2019) Senay, Volkan; Ozen, SonerA Li4Ti5O12 thin film was fabricated on an ITO layer previously prepared on a glass microscope slide via RF magnetron sputtering technique. The structural, morphological, optical and electrochemical properties of the produced thin film were studied by several techniques. According to the findings, the investigated film has a crystalline structure with small grains. Its surface is nano-structured, dense and smooth. The system (LTO/ITO/glass) exhibits an average transmittance rate above 70% in the visible region with a band gap energy value of 3.8 eV. The obtained impedance spectrum shows a good blocking behavior. The Warburg diffusion element with a value of 817 S.s(1/2) provides easy Li-ion diffusion.Öğe Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc(Springer, 2016) Pat, Suat; Senay, Volkan; Ozen, Soner; Korkmaz, SadanMo-doped and undoped GeGaAs layers have been deposited by the thermionic vacuum arc (TVA) method, an alternative, fast plasma deposition technique. The thicknesses of the deposited layers were identical. The surface, mechanical, and optical properties of the deposited layers were studied to determine the influence of Mo doping on GeGaAs. The transparency of GeGaAs was shifted towards the near-infrared region by Mo doping. Bandgap values shifted by approximately 0.3 eV. In other words, the bandgap value of Mo-doped GeGaAs was nearly equal to that of GaAs materials. The average roughness and grain size of the Mo-doped material were smaller than for the GeGaAs layer. The particle distributions of the Mo-doped and undoped GeGaAs were almost perfect Gaussians. However, the mean height of the Mo-doped GeGaAs grains was six times that for undoped GeGaAs. The surface was homogeneous. The Mo-doped layer showed greater absorbance than the GeGaAs material. The produced Mo-doped sample showed hybrid properties.
