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Öğe Analysis of optical, structural, and morphological properties of a Ti-doped ?-Fe2O3 thin film produced through RF and DC magnetron Co-sputtering(Elsevier Sci Ltd, 2024) Salari, Maryam Abdolahpour; Muglu, Guenay Merhan; Senay, Volkan; Saritas, Sevda; Kundakci, MutluIn this study, a Titanium (Ti) doped alpha-Fe2O3 (hematite) thin layer was synthesized onto a glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The investigation focused on examining specific physical properties of the film. The optical, structural, morphological, and elemental features of the resulting Ti-doped alpha-Fe2O3 thin film were characterized using different characterization techniques. The XRD studies indicated a rhombohedral crystal structure in the studied thin film. The calculation of the Eg value for the thin film, based on absorption measurements, resulted in a value of 2.19 eV. Raman peaks were identified within the range of 218 cm(-1) to 1300 cm(-1). According to SEM images, the thin film exhibited a uniform surface morphology across the substrate. AFM images revealed a low root mean square (RMS) roughness value, indicating a smooth Ti:Fe2O3 thin film surface.Öğe Evaluation of the optical, structural, and morphological characteristics of a Sn-doped ?-Fe2O3 thin film fabricated using RF and DC magnetron Co-sputtering technique(Elsevier Sci Ltd, 2025) Salari, Maryam Abdolahpour; Senay, Volkan; Muglu, Gunay Merhan; Saritas, Sevda; Kundakci, MutluIn this research, a Sn-doped hematite (alpha-Fe2O3) thin film on a glass substrate was synthesized using DC and RF magnetron sputtering techniques, and the physical features of the film were analyzed in detail. This study, conducted to investigate the effects of Sn doping on the hematite structure, evaluated the optical and morphological attributes of the thin film using advanced characterization techniques such as UV-VIS spectroscopy, Raman spectroscopy, XRD, SEM, EDS, and AFM. The optical band gap was determined from absorption measurement and calculated to be 2.12 eV. Raman spectroscopy results revealed various characteristic peaks between 100 cm(-1) and 1500 cm(-1). A strong (214) diffraction peak confirms the enhanced hematite phase formation in the thin film. The crystallite size of the Sn-doped thin film, calculated via Scherrer's formula, is 20 nm. SEM images showed that the thin film exhibited a smooth and homogeneous surface morphology on the glass substrate. According to the EDS results, the atomic doping ratio of Sn in Fe2O3 is 2.84 %. Additionally, AFM analysis confirmed that the Sn-doped alpha-Fe2O3 thin film had a smooth surface, as indicated by a low RMS (Root Mean Square) roughness value of 8.11 nm. These properties suggest that the thin film could be suitable for optoelectronic applications. The study emphasizes the potential of Sn-doped alpha-Fe2O3 thin films, particularly for optoelectronic and photocatalytic devices, and underscores the need for further investigation of these materials. Furthermore, it was concluded that these materials should be considered in a broader context for their potential use in various technological applications.Öğe RF ve DC Magnetron Püskürtme Tekniği ile Büyütülmüş Ni Katkılı ?-Fe2O3 İnce Filmin Optik, Yapısal ve Morfolojik Özellikleri(2025) Salari, Maryam Abdolahpour; Muğlu, Günay Merhan; Şenay, Volkan; Sarıtaş, SevdaBu araştırmada, doğru akım (DC) ve radyo frekansı (RF) magnetron püskürtme tekniği kullanılarak cam alttaş üzerinde Ni katkılı hematit (?- Fe2O3) ince film sentezlenmiştir ve üretilen filmin birçok fiziksel özellikleri araştırılmıştır. Elde edilen Ni katkılı ?-Fe2O3 ince filmin optik, yapısal ve morfolojik analizleri, UV-VIS spektroskopisi, EDX, X-ışını kırınımı (XRD), taramalı elektron mikroskobu (SEM) ve atomik kuvvet mikroskobu (AFM) kullanılarak belirlenmiştir. Absorbsiyon ölçümüne dayanarak, ince filmin bant aralığı enerji değeri 2,12 eV olarak hesaplanmıştır. XRD analizi, incelenen ince filmin nanokristalin yapıya sahip olduğunu göstermiştir. SEM görüntüsüne göre ince film alttaş boyunca düzgün bir yüzey morfolojisi sergilemiştir. Ayrıca AFM görüntüleri, düşük bir RMS pürüzlülük değeri ortaya koymuştur ve bu da Ni katkılı Fe2O3 ince filminin pürüzsüz bir yüzeye sahip olduğunu göstermektedir.Öğe Some Physical Attributes of a Cr-Doped Iron Oxide Thin Film Produced by Simultaneous RF and DC Magnetron Sputtering Technique(2025) Muğlu, Günay Merhan; Salari, Maryam Abdolahpour; Şenay, Volkan; Sarıtaş, SevdaIron oxide has recently attracted considerable interest because of its diverse structural and morphological configurations, leading to progressions in various technologies, including ultrahigh magnetic storage, magneto-optical sensors, humidity sensors, and gas sensors. In this research, a thin film of iron oxide doped with chromium was produced on a glass substrate using simultaneous RF and DC magnetron sputtering. The resulting thin film's optical, structural, elemental, and surface characteristics were thoroughly investigated using UV-VIS spectroscopy, XRD, XPS, AFM, and SEM. XRD was utilized to examine the structure of the thin film, which demonstrated good crystallinity. Notably, prominent diffraction peaks at various angles corresponded to specific planes of the normal hematite phase of Fe2O3, as verified by the JCPDS Card No. 33-0664. A significant peak at (104) indicated a sturdy development of the hematite phase. The XPS spectrum analysis approved the presence of iron, oxygen, and chromium in the thin film. This study, known for its straightforward methodology, provides valuable insights into the chromium impurity doping process of Fe2O3, contributing to a deeper understanding of its structural and morphological characteristics.Öğe The structural, optical, topographical, and H2 sensing characteristics of a Zn-doped Fe2O3 thin layer deposited via DC & RF magnetron co-sputtering method(Springer, 2025) Muglu, Gunay Merhan; Senay, Volkan; Saritas, Sevda; Salari, Maryam Abdolahpour; Kundakci, MutluIn this study, a Zn-doped iron oxide layer was deposited onto a microscope slide using the magnetron co-sputtering technique with direct current (DC) and radio frequency (RF) sources. We comprehensively characterized the resulting Zn-doped Fe2O3 thin layer, employing techniques such as XRD, Raman spectroscopy, UV-VIS spectrophotometry, SEM, EDX, & AFM. XRD examination showed the nanocrystalline structure in the thin layer under investigation. Based on recorded absorption data, the band gap energy value calculation resulted in a value of 2.23 eV for the thin film. Raman spectroscopy identified peaks possessing Raman shifts from 100 to 1400 cm-1. SEM investigation illustrated a consistently uniform thin film surface characteristic throughout the substrate. Additionally, the AFM study disclosed a small RMS roughness value, indicative of an unrough surface for the Zn: Fe2O3 thin layer. The Fe2O3 thin film doped with Zn employing a 30 W DC voltage demonstrated effective hydrogen sensing capability at 300 degrees C, achieving notable response and recovery time. This work presents a novel application of Zn-doped Fe2O3 thin films as highly sensitive and stable hydrogen sensors, tailored for high-temperature environments. The unique combination of nanocrystalline structure and Zn doping optimizes the material's electronic properties, enhancing its responsiveness to hydrogen gas. This approach offers a scalable, cost-effective pathway for developing advanced sensor technologies suited to environmental monitoring, industrial safety, and hazardous gas detection, making it a valuable addition to the field of gas-sensing materials.
