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    Analysis of optical, structural, and morphological properties of a Ti-doped ?-Fe2O3 thin film produced through RF and DC magnetron Co-sputtering
    (Elsevier Sci Ltd, 2024) Salari, Maryam Abdolahpour; Muglu, Guenay Merhan; Senay, Volkan; Saritas, Sevda; Kundakci, Mutlu
    In this study, a Titanium (Ti) doped alpha-Fe2O3 (hematite) thin layer was synthesized onto a glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The investigation focused on examining specific physical properties of the film. The optical, structural, morphological, and elemental features of the resulting Ti-doped alpha-Fe2O3 thin film were characterized using different characterization techniques. The XRD studies indicated a rhombohedral crystal structure in the studied thin film. The calculation of the Eg value for the thin film, based on absorption measurements, resulted in a value of 2.19 eV. Raman peaks were identified within the range of 218 cm(-1) to 1300 cm(-1). According to SEM images, the thin film exhibited a uniform surface morphology across the substrate. AFM images revealed a low root mean square (RMS) roughness value, indicating a smooth Ti:Fe2O3 thin film surface.
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    Optical, structural, morphological, and gas sensing properties of Mg-doped ?-Fe2O3 thin films deposited by RF and DC magnetron Co-sputtering technique
    (Elsevier, 2024) Saritas, Sevda; Muglu, Gunay Merhan; Turgut, Erdal; Kundakci, Mutlu; Yildirim, Muhammet; Senay, Volkan
    In this research, Mg -doped hematite (alpha-Fe2O3) thin films with different Mg -doping concentrations were synthesized on glass substrates using the direct current (DC) and radio frequency (RF) magnetron co -sputtering technique, and the changes of some physical properties due to the concentration of the dopant were investigated. The optical, structural, morphological, and elemental properties of the obtained Mg -doped alpha-Fe2O3 thin films were determined by X-ray diffraction (XRD) analysis, UV-Vis spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), dispersive X-ray spectroscopy and atomic force microscopy (AFM). XRD analysis revealed that the investigated thin films have a rhombohedral crystal structure. The deposition of films at different DC sputtering voltages caused significant variations in stoichiometry and nanostructure. The thin films' band gap energy values were estimated based on absorption measurements, and results ranged from 2.15 eV to 2.69 eV. Raman peaks were observed between 218 cm(-1) and 1305 cm(-1). The thin films exhibit uniform surface morphology throughout the substrate according to the SEM images. The low RMS roughness values obtained from AFM images showed that the surfaces of Mg:Fe2O3 thin films are smooth. The Mg -doped alpha-Fe(2)O(3 )thin film doped by 150 W DC voltage exhibited a good gas -sensing response at 300 C. A remarkably quick response/ recovery time was achieved.