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Öğe Analysis of optical, structural, and morphological properties of a Ti-doped ?-Fe2O3 thin film produced through RF and DC magnetron Co-sputtering(Elsevier Sci Ltd, 2024) Salari, Maryam Abdolahpour; Muglu, Guenay Merhan; Senay, Volkan; Saritas, Sevda; Kundakci, MutluIn this study, a Titanium (Ti) doped alpha-Fe2O3 (hematite) thin layer was synthesized onto a glass substrate, employing the simultaneous DC and RF magnetron sputtering method. The investigation focused on examining specific physical properties of the film. The optical, structural, morphological, and elemental features of the resulting Ti-doped alpha-Fe2O3 thin film were characterized using different characterization techniques. The XRD studies indicated a rhombohedral crystal structure in the studied thin film. The calculation of the Eg value for the thin film, based on absorption measurements, resulted in a value of 2.19 eV. Raman peaks were identified within the range of 218 cm(-1) to 1300 cm(-1). According to SEM images, the thin film exhibited a uniform surface morphology across the substrate. AFM images revealed a low root mean square (RMS) roughness value, indicating a smooth Ti:Fe2O3 thin film surface.Öğe DIRECT AND FAST GROWTH OF A SI:GAAS THIN FILM BY MEANS OF THERMIONIC VACUUM ARC (TVA)(IEEE, 2015) Senay, Volkan; Ozen, Soner; Pat, Suat; Korkmaz, Sadan[Abstract Not Available]Öğe The Effects of Boron Alloying on the Structural and Optical Properties of GaAs Deposited by a Thermionic Vacuum Arc Method(Amer Scientific Publishers, 2016) Pat, Suat; Korkmaz, Sadan; Ozen, Soner; Senay, VolkanThis study reports the influence of the boron alloying on the structural and optical properties of GaAs compound for the first time. UV-Vis-NIR spectrophotometer, interferometer, photoluminescence spectrophotometer, X-ray diffraction, field emission scanning electron microscopy, and atomic force microscopy tools were used for the determination of the structural and optical properties. As results, boron atoms affect the bang gap to upper energy level with very small variations. But, structural properties and grain dimensions of GaAs have improved by adding boron atoms. The results show that used method, thermionic vacuum arc, is the fast, direct, environmental and very easy-doped BGaAs ternary compounds deposition method according to other methods. Finally, this method is a promising method for GaAs technology.Öğe MO DOPED GAN THIN FILM GROWTH USING THERMIONIC VACUUM ARC (TVA)(IEEE, 2015) Ozen, Soner; Pat, Suat; Korkmaz, Sadan; Senay, Volkan[Abstract Not Available]Öğe Optical and surface properties of ZnN thin films manufactured by radio frequency reactive magnetron sputtering(Elsevier Gmbh, 2019) Senay, Volkan; Ozen, Soner; Aydogmus, TunaZnN is a relatively new material and its physical properties are not yet well studied. In this research, ZnN thin films having different thickness values were deposited on glass substrates by means of radio frequency (RF) reactive magnetron sputtering technique at room temperature and some physical properties of ZnN thin films were investigated by several techniques. UV-vis spectrophotometer and reflectometer were employed to investigate the optical properties of the produced thin films. The surface properties were investigated by using tensiometer and atomic force microscope (AFM). The effects of film thickness on the optical and surface properties of ZnN thin films were discussed. The refractive index and band gap values were found to be dependent on thickness of ZnN thin films. The AFM investigations indicated that the surfaces of the films are compact and smooth. From the wetting experiments, it was found that the surfaces of the films are hydrophobic and surface free energy values are low as reported in literature.Öğe Optical, morphological and nano-mechanical properties of chromium oxide thin films fabricated by radio frequency (RF) magnetron sputtering(Elsevier Gmbh, 2020) Ozen, Soner; Senay, VolkanIn this research, two transparent chromium oxide thin films having different thickness values were simultaneously deposited on glass substrates by adjusting target-substrate distance by means of radio frequency (RF) magnetron sputtering technique. The effect of film thickness on optical, morphological and nano-mechanical properties of the produced thin films were analyzed by using UV-VIS spectrophotometer, interferometer, tensiometer and atomic force microscope. The transmittance and absorbance of the films were measured in the incident photon wavelength range of 300-1000 nm. The optical energy band gap value of the produced thin films was estimated to be approximately 4 eV from the obtained absorbance data via Tauc's method. According to the results obtained from nano-mechanical tests, the produced thin films were highly scratch resistant. From the wetting experiments, it was found that the surfaces of the films were hydrophilic.Öğe Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc(Amer Scientific Publishers, 2015) Senay, Volkan; Ozen, Soner; Pat, Suat; Korkmaz, SadanA 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.Öğe Optical, structural, morphological, and gas sensing properties of Mg-doped ?-Fe2O3 thin films deposited by RF and DC magnetron Co-sputtering technique(Elsevier, 2024) Saritas, Sevda; Muglu, Gunay Merhan; Turgut, Erdal; Kundakci, Mutlu; Yildirim, Muhammet; Senay, VolkanIn this research, Mg -doped hematite (alpha-Fe2O3) thin films with different Mg -doping concentrations were synthesized on glass substrates using the direct current (DC) and radio frequency (RF) magnetron co -sputtering technique, and the changes of some physical properties due to the concentration of the dopant were investigated. The optical, structural, morphological, and elemental properties of the obtained Mg -doped alpha-Fe2O3 thin films were determined by X-ray diffraction (XRD) analysis, UV-Vis spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), dispersive X-ray spectroscopy and atomic force microscopy (AFM). XRD analysis revealed that the investigated thin films have a rhombohedral crystal structure. The deposition of films at different DC sputtering voltages caused significant variations in stoichiometry and nanostructure. The thin films' band gap energy values were estimated based on absorption measurements, and results ranged from 2.15 eV to 2.69 eV. Raman peaks were observed between 218 cm(-1) and 1305 cm(-1). The thin films exhibit uniform surface morphology throughout the substrate according to the SEM images. The low RMS roughness values obtained from AFM images showed that the surfaces of Mg:Fe2O3 thin films are smooth. The Mg -doped alpha-Fe(2)O(3 )thin film doped by 150 W DC voltage exhibited a good gas -sensing response at 300 C. A remarkably quick response/ recovery time was achieved.Öğe SOLID STATE BATTERY MANUFACTURING WITH THERMIONIC VACUUM ARC AND RF SPUTTERING(IEEE, 2015) Pat, Suat; Ozen, Soner; Senay, Volkan; Korkmaz, Sadan; Pat, Zerrin[Abstract Not Available]Öğe Some physical properties of a Li4Ti5O12 thin film electrode manufactured by radio frequency magnetron sputtering(Edp Sciences S A, 2019) Senay, Volkan; Ozen, SonerA Li4Ti5O12 thin film was fabricated on an ITO layer previously prepared on a glass microscope slide via RF magnetron sputtering technique. The structural, morphological, optical and electrochemical properties of the produced thin film were studied by several techniques. According to the findings, the investigated film has a crystalline structure with small grains. Its surface is nano-structured, dense and smooth. The system (LTO/ITO/glass) exhibits an average transmittance rate above 70% in the visible region with a band gap energy value of 3.8 eV. The obtained impedance spectrum shows a good blocking behavior. The Warburg diffusion element with a value of 817 S.s(1/2) provides easy Li-ion diffusion.Öğe Some physical properties of nanostructured Al doped ZnO thin films synthesized by RF magnetron sputtering at room temperature(Springer, 2019) Senay, VolkanIn this research, AZO thin films were deposited on glass substrates with 70W, 100W and 125W RF powers at room temperature by RF magnetron sputtering technique. The structural, optical and surface properties of the produced thin films were investigated. According to the obtained results, the investigated thin films had a crystalline structure and they showed high transparency in the visible region. The increase of RF power produced thicker films. Relatively thicker AZO films produced with higher RF power exhibited greater number of interference fringes in the reflectance and transmittance spectra. The refractive index values of the film produced with 125W RF power were considerably lower than those of the films produced with 70W and 100W due to the decreased packing density. The optical energy band gap values of the produced AZO thin films were higher than that of undoped ZnO films. This expansion resulted from the Burstein-Moss effect. However, the band gap energy value as well as the roughness of the film surface decreased like refractive index with an increase in RF power, especially after 100W. As a result, the values corresponding to the optical and surface properties can be tuned and AZO thin films can be produced by RF magnetron sputtering technique as promising candidates for optoelectronic devices and transparent conductive oxide applications.Öğe A Study on the Attitudes of Prospective Science Teachers towards the Effects of Mobile Applications and Information Services in Distance Education(Int Soc Art Science & Technology-Isast, 2015) Senay, Volkan; Yilmaz, Malik; Senay, Burcu Aydemir; Gunes, AysenurToday, technology is an essential part of human life and use of the technological devices has rapidly increased. Mobile technology products most often used among the technological devices (smart phones, tablets etc.) offer an opportunity for individuals for easily access to all kinds of information they want without a time and place limit. Mobile technology products previously used as a communication device, today, catch the attention of individuals and/or institutions not only for this purpose, but also making its presence felt in many fields such as trade, education. in the traditional education, also in the distance education, the effect of the information centers and services is important for the information access and sharing of the users to reach to the high level. The presentation of the information resources by the information centers by being digitalized to the users of them is undoubtedly an advantage for the users receiving the distance education. In this study, the description of the opinions of the prospective science teachers concerning the mobile applications and information services in the distance education has been aimed. The sample of the research is composed of Bayburt University and Kastamonu University Primary Science Education Department third class studentsÖğe Surface, Nanomechanical, and Optical Properties of Mo-Doped GeGaAs Thin Film Deposited by Thermionic Vacuum Arc(Springer, 2016) Pat, Suat; Senay, Volkan; Ozen, Soner; Korkmaz, SadanMo-doped and undoped GeGaAs layers have been deposited by the thermionic vacuum arc (TVA) method, an alternative, fast plasma deposition technique. The thicknesses of the deposited layers were identical. The surface, mechanical, and optical properties of the deposited layers were studied to determine the influence of Mo doping on GeGaAs. The transparency of GeGaAs was shifted towards the near-infrared region by Mo doping. Bandgap values shifted by approximately 0.3 eV. In other words, the bandgap value of Mo-doped GeGaAs was nearly equal to that of GaAs materials. The average roughness and grain size of the Mo-doped material were smaller than for the GeGaAs layer. The particle distributions of the Mo-doped and undoped GeGaAs were almost perfect Gaussians. However, the mean height of the Mo-doped GeGaAs grains was six times that for undoped GeGaAs. The surface was homogeneous. The Mo-doped layer showed greater absorbance than the GeGaAs material. The produced Mo-doped sample showed hybrid properties.
