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    The Frequency-Dependent Electrical Properties and Fabrication of Diode
    (Gazi Univ, 2025) Sevgili, Omer; Orak, Ikram; Ozel, Sultan Suleyman; Ozel, Faruk
    The fabrication of Al/NiO/p-Si Schottky diode (SD) was formed using a thermal evaporation system. The structural analyze of NiO using an interfacial layer was conducted using a Scanning Electron Microscope (SEM) and the SEM cross-section revealed a thickness of 0.0345 mu m for NiO interfacial layer. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the fabricated SD were performed in the 50 kHz to 5 MHz frequency range and in the-3 V to +3 V range. The Nicollian-Brews method was employed to calculate the series resistance (Rs), while the high-low frequency capacitance method (CHF-CLF) was used to calculate the surface states (Nss). The value of the Nss was determined to be in the order of 1012 eV-1cm-2. These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.
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    The role of NiO in isotype heterojunction photodiodes
    (Iop Publishing Ltd, 2025) Sevgili, Omer; Orak, Ikram; Ozel, Sultan Suleyman; Ozel, Faruk
    This study presents a structural analysis of NiO and the fabrication of Al/NiO/p-Si isotype heterojunction photodiode (PD) as well as an investigation of the photo-response and photovoltaic (PV) properties of the PD in the various illumination intensities. The series resistance (RS) value of the Al/NiO/p-Si was calculated to be 0.11 k Omega using Ohm's Law at 2 V. This result corroborates the assertion that RS is the pivotal parameter for attaining optimal performance in a PD. The NiO has made a notable improvement to the electrical parameters such as ideality factor, barrier height, and series resistance. The spectral responsivity R value of the PD was calculated as 1.59 A W-1 at -2 V. The Al/NiO/p-Si exhibited a short-circuit current density (JSC) of 60.38 mAcm-2, an open-circuit voltage (VOC) of 149.0 mV, a fill factor (FF) of 27.67%, and a power conversion efficiency (PCE) of 2.49%. In view of the experimental results, it can be concluded that NiO represents a promising material for the optimization of heterojunction photodiode applications.