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Toplam kayıt 3, listelenen: 1-3
Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method
(John Wiley and Sons Inc., 2016)
A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the ...
Optical, structural, morphological and compositional characterization of a Co-doped GaAs semiconducting thin film produced by thermionic vacuum arc
(Elsevier Ltd, 2016)
A 80 nm 2 at% Co-doped GaAs thin film was deposited on a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique using GaAs and Co pellets as source materials. Tools and techniques ...
Heavily carbon doped GaAs nanocrystalline thin film deposited by thermionic vacuum arc method
(Elsevier Ltd, 2016)
In this paper, we introduced a new different thin film deposition method for heavily carbon doped GaAs. Used method is thermionic vacuum arc (TVA) and first used for the carbon doping process. The method is very fast ...