Ara
Toplam kayıt 13, listelenen: 11-13
Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
(Elsevier Ltd, 2015)
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, ...
Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc
(Springer New York LLC, 2015)
Using a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films ...
GaN thin film deposition on glass and PET substrates by thermionic vacuum arc (TVA)
(Elsevier Ltd, 2015)
In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a plasma deposition technique, for the first time. We present a new deposition mechanism for GaN thin films with a very short production ...