Konu "X ray spectroscopy" için Scopus İndeksli Yayınlar Koleksiyonu listeleme
Toplam kayıt 6, listelenen: 1-6
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Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc
(Springer New York LLC, 2015)In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were ... -
Delocalization and charge transfer studies of PERMENDUR49, KOVAR and Ti50Co50 alloys from relative K X-ray intensity ratios
(Elsevier Ltd, 2017)K?-to-K? X-ray intensity ratios of Fe, Ni, Co, Ti, V in pure form and PERMENDUR49 (Fe49Co49V2), KOVAR (Fe54Ni29Co17) and Ti50Co50 alloys were calculated in order to determine valence-electron structure of the samples. The ... -
Effect of external magnetic field on the K?/K? X-ray intensity ratios of Ti x Ni 1-x alloys excited by 59.54 and 22.69 keV photons
(Elsevier Ltd, 2016)The effects of external magnetic field and exciting photon energies on the K?/K? X-ray intensity ratios of various alloy compositions of Ti-Ni transition metal alloys have been investigated in this work using X-ray ... -
The effects of heat treatment on the synthesis of nickel ferrite (NiFe2O4) nanoparticles using the microwave assisted combustion method
(Elsevier, 2015)NiFe2O4nanoparticles were synthesized using the microwave assisted combustion method based on metal nitrate salts and urea. To remain of organic matters and to stabilize the particles, samples were thermally treated at ... -
Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method
(Elsevier Ltd, 2016)In this paper, copper oxide (CuO/Cu2O) nanocrystalline thin films were deposited by radio frequency (RF) magnetron sputtering system at 75 W and 100 W. The surface, optical, composition and structural properties of obtaining ... -
Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
(Springer New York LLC, 2017)Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...