Basit öğe kaydını göster

dc.contributor.authorÖzkan, Bayram
dc.contributor.authorİgman E.
dc.contributor.authorGuney H.
dc.contributor.authorSimsek O.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:42:58Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:42:58Z
dc.date.issued2019
dc.identifier.issn0749-6036
dc.identifier.urihttps://dx.doi.org/10.1016/j.spmi.2019.01.025
dc.identifier.urihttps://hdl.handle.net/20.500.12403/305
dc.description.abstractCobalt doped manganese oxide thin films (Mn 3 O 4 :Co) were successfully deposited on soda lime glass substrates using SILAR technique. Mn 3 O 4 :Co thin films were characterized using XRD, SEM, Uv–VIS and Raman spectroscopy. The XRD spectra showed that thin films had substantially Hausmannite crystal structure. The preferential orientation of the pure and 0.5 at.% Co doped manganese oxide thin films (Mn 3 O 4 ) was (002), but with increasing Co doping, it was detected that this preferential orientation shift towards the (211) plane. The absorbance, transmittance and optical band gap of the Mn 3 O 4 :Co thin films were determined using Uv–Vis spectroscopy and these properties of the thin films differed considerably due to cobalt doping. The optical band gap of pure Mn 3 O 4 thin films was 2.00 eV, but on the other hand, due to the Co doping this value increased before and then decreased slightly. Optical transmittance of Mn 3 O 4 :Co films increased from 60% to 72% with the effect of Co doping. A1g mode, which is the characteristic vibration peak of Mn 3 O 4 films, was confirmed for pure and doped Mn 3 O 4 thin films at a wavelength of 658 nm. © 2019 Elsevier Ltden_US
dc.language.isoengen_US
dc.publisherAcademic Press
dc.relation.isversionof10.1016/j.spmi.2019.01.025
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDoping effect
dc.subjectHausmannite
dc.subjectRAMAN
dc.subjectSemiconductors
dc.subjectSILAR
dc.subjectCobalt compounds
dc.subjectCrystal structure
dc.subjectEnergy gap
dc.subjectLime
dc.subjectManganese oxide
dc.subjectOptical band gaps
dc.subjectOxide films
dc.subjectOxides
dc.subjectSemiconductor doping
dc.subjectSemiconductor materials
dc.subjectSubstrates
dc.subjectX ray diffraction
dc.subjectDoping effects
dc.subjectHausmannites
dc.subjectNanostructured thin film
dc.subjectOxide thin films
dc.subjectPreferential orientation
dc.subjectRAMAN
dc.subjectSILAR
dc.subjectSoda lime glass substrate
dc.subjectThin films
dc.subjectDoping effect
dc.subjectHausmannite
dc.subjectRAMAN
dc.subjectSemiconductors
dc.subjectSILAR
dc.subjectCobalt compounds
dc.subjectCrystal structure
dc.subjectEnergy gap
dc.subjectLime
dc.subjectManganese oxide
dc.subjectOptical band gaps
dc.subjectOxide films
dc.subjectOxides
dc.subjectSemiconductor doping
dc.subjectSemiconductor materials
dc.subjectSubstrates
dc.subjectX ray diffraction
dc.subjectDoping effects
dc.subjectHausmannites
dc.subjectNanostructured thin film
dc.subjectOxide thin films
dc.subjectPreferential orientation
dc.subjectRAMAN
dc.subjectSILAR
dc.subjectSoda lime glass substrate
dc.subjectThin films
dc.titleThe role of cobalt doping on the optical and structural properties of Mn 3 O 4 nanostructured thin films obtained by SILAR techniqueen_US
dc.typearticleen_US
dc.relation.journalSuperlattices and Microstructuresen_US
dc.contributor.departmentBayburt University, Mühendislik Fakültesi, XXen_US
dc.contributor.authorID55523238500
dc.contributor.authorID57201333718
dc.contributor.authorID26321497700
dc.contributor.authorID7004622888
dc.identifier.volume128
dc.identifier.startpage212
dc.identifier.endpage220
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.contributor.institutionauthorÖzkan, Bayram


Bu öğenin dosyaları:

Thumbnail

Bu öğe aşağıdaki koleksiyon(lar)da görünmektedir.

Basit öğe kaydını göster