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dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.contributor.authorÖzen S.
dc.contributor.authorŞenay V.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:58Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:58Z
dc.date.issued2015
dc.identifier.issn0957-4522
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-015-2670-7
dc.identifier.urihttps://hdl.handle.net/20.500.12403/729
dc.description.abstractUsing a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films produced in a very short time. Crystal direction was found to be (111) plane for the GaAs/PET sample and (022) plane and (133) plane for the GaAs/glass sample, respectively. The average roughness values of the deposited thin films were determined to be approximately 30 nm for GaAs/PET and 60 nm for GaAs/glass. The structures can be seen clearly in field emission scanning electron microscopy and atomic force microscopy. The obtained optical band is nearly the same with literatures values of the GaAs. Although produced structures in different crystal formations, only aggregations dimensions and absorbance of the layers were changed. Obtained refractive index values are nearly same with database info. © 2015, Springer Science+Business Media New York.en_US
dc.language.isoengen_US
dc.publisherSpringer New York LLC
dc.relation.isversionof10.1007/s10854-015-2670-7
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy
dc.subjectCrystal atomic structure
dc.subjectDeposition
dc.subjectField emission microscopes
dc.subjectGallium alloys
dc.subjectGlass
dc.subjectPlastic bottles
dc.subjectRefractive index
dc.subjectScanning electron microscopy
dc.subjectSemiconducting gallium
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectCrystal direction
dc.subjectCrystal formation
dc.subjectDeposition mechanism
dc.subjectFast growths
dc.subjectGaAs thin films
dc.subjectGlass substrates
dc.subjectOptical bands
dc.subjectThermionic vacuum arc
dc.subjectGallium arsenide
dc.subjectAtomic force microscopy
dc.subjectCrystal atomic structure
dc.subjectDeposition
dc.subjectField emission microscopes
dc.subjectGallium alloys
dc.subjectGlass
dc.subjectPlastic bottles
dc.subjectRefractive index
dc.subjectScanning electron microscopy
dc.subjectSemiconducting gallium
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectCrystal direction
dc.subjectCrystal formation
dc.subjectDeposition mechanism
dc.subjectFast growths
dc.subjectGaAs thin films
dc.subjectGlass substrates
dc.subjectOptical bands
dc.subjectThermionic vacuum arc
dc.subjectGallium arsenide
dc.titleDirect and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arcen_US
dc.typearticleen_US
dc.relation.journalJournal of Materials Science: Materials in Electronicsen_US
dc.contributor.departmentBayburt Universityen_US
dc.contributor.authorID9274843500
dc.contributor.authorID7003415405
dc.contributor.authorID55897767500
dc.contributor.authorID55897416100
dc.identifier.volume26
dc.identifier.issue4
dc.identifier.startpage2210
dc.identifier.endpage2214
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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