Optical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arc

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dc.authoridOzen, Soner/0000-0002-2351-3234
dc.authoridSenay, Volkan/0000-0002-6579-2737
dc.contributor.authorSenay, Volkan
dc.contributor.authorOzen, Soner
dc.contributor.authorPat, Suat
dc.contributor.authorKorkmaz, Sadan
dc.date.accessioned2024-10-04T18:52:32Z
dc.date.available2024-10-04T18:52:32Z
dc.date.issued2015
dc.departmentBayburt Üniversitesien_US
dc.description.abstractA 780 nm thick Zn-doped GaAs p-type semiconducting film was deposited onto a glass substrate under a high vacuum condition by means of the thermionic vacuum arc technique in a very short period of time (90 sec) using GaAs and Zn pellets as source materials. In order to characterize the produced film, the optical constants and absorbance of the film were measured using optical methods. By using the obtained optical absorbance data, the optical band gap was estimated from the Tauc plot based on the relation (alpha hv)(2) = B(hv - E-g). The refractive index value of the film was 3.73 at lambda = 632.8 nm. The band gap was estimated to be 1.35 eV. According to the results obtained from the FESEM and AFM related studies, the produced film displayed a granular surface morphology with a root mean square roughness of 17 nm. Contact angle measurements of several testing liquids were used to characterize the film in terms of wettability. It was found that the contact angle value was dependent on the liquid used. However, the film was hydrophilic as observed in contact angle measurements.en_US
dc.identifier.doi10.1166/mat.2015.1279
dc.identifier.endpage402en_US
dc.identifier.issn2169-429X
dc.identifier.issn2169-4303
dc.identifier.issue6en_US
dc.identifier.startpage397en_US
dc.identifier.urihttps://doi.org/10.1166/mat.2015.1279
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3538
dc.identifier.volume4en_US
dc.identifier.wosWOS:000374019200001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherAmer Scientific Publishersen_US
dc.relation.ispartofMaterials Focusen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNanostructuresen_US
dc.subjectSemiconductorsen_US
dc.subjectThin Filmsen_US
dc.subjectOptical Propertiesen_US
dc.subjectSurface Propertiesen_US
dc.titleOptical, Structural and Morphological Characterization of a Zn-Doped GaAs Semiconducting Thin Film Produced by Thermionic Vacuum Arcen_US
dc.typeArticleen_US

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