The Frequency-Dependent Electrical Properties and Fabrication of Diode

dc.contributor.authorSevgili, Omer
dc.contributor.authorOrak, Ikram
dc.contributor.authorOzel, Sultan Suleyman
dc.contributor.authorOzel, Faruk
dc.date.accessioned2026-02-28T12:18:11Z
dc.date.available2026-02-28T12:18:11Z
dc.date.issued2025
dc.departmentBayburt Üniversitesi
dc.description.abstractThe fabrication of Al/NiO/p-Si Schottky diode (SD) was formed using a thermal evaporation system. The structural analyze of NiO using an interfacial layer was conducted using a Scanning Electron Microscope (SEM) and the SEM cross-section revealed a thickness of 0.0345 mu m for NiO interfacial layer. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements of the fabricated SD were performed in the 50 kHz to 5 MHz frequency range and in the-3 V to +3 V range. The Nicollian-Brews method was employed to calculate the series resistance (Rs), while the high-low frequency capacitance method (CHF-CLF) was used to calculate the surface states (Nss). The value of the Nss was determined to be in the order of 1012 eV-1cm-2. These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.
dc.identifier.doi10.2339/politeknik.1626006
dc.identifier.issn1302-0900
dc.identifier.issn2147-9429
dc.identifier.urihttps://doi.org/10.2339/politeknik.1626006
dc.identifier.urihttps://hdl.handle.net/20.500.12403/6156
dc.identifier.wosWOS:001606357000001
dc.identifier.wosqualityQ4
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherGazi Univ
dc.relation.ispartofJournal of Polytechnic-Politeknik Dergisi
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260218
dc.subjectNiO
dc.subjectfrequency-dependent
dc.subjectseries resistance
dc.subjectsurface states
dc.titleThe Frequency-Dependent Electrical Properties and Fabrication of Diode
dc.typeArticle

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