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Toplam kayıt 4, listelenen: 1-4
Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc
(Springer New York LLC, 2015)
In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were ...
Deposition of a Mo doped GaN thin film on glass substrate by thermionic vacuum arc (TVA)
(Springer New York LLC, 2015)
Current research presents a new deposition method for GaN thin films that produces in a very short production time for GaN-based solid-state applications. A Mo doped GaN thin film on a glass substrate was produced by ...
Some physical properties of a Si-doped nano-crystalline GaAs thin film grown by thermionic vacuum arc
(Elsevier Ltd, 2015)
Abstract A 160 nm thick Si-doped nano-crystalline GaAs film was grown on a glass substrate by means of the thermionic vacuum arc in just 50 s. Tools and techniques such as an optical reflectometer, Uv-Vis-NIR spectrophotometer, ...
Direct and fast growth of GaAs thin films on glass and polyethylene terephthalate substrates using a thermionic vacuum arc
(Springer New York LLC, 2015)
Using a thermionic vacuum arc, single?crystal gallium arsenide (GaAs) layers of micron thickness were grown on PET and glass substrates in 2 min. We present a new deposition mechanism and parameters for GaAs thin films ...