Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, ...

This study focuses on characterization and understanding of the substrate effect on Ge doped GaN thin films coated onto transparent substrates. The produced films were deposited onto unheated glass and unheated polyethylene ...

In this paper, BGaN thin films with two different thicknesses were deposited on two different substrates and their surface morphologies were investigated. The amorphous glass and semi-crystalline polyethylene terephthalate ...