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dc.contributor.authorŞenay V.
dc.contributor.authorÖzen S.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz Ş.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:26Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:26Z
dc.date.issued2017
dc.identifier.issn0925-8388
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2017.05.297
dc.identifier.urihttps://hdl.handle.net/20.500.12403/554
dc.description.abstractA 155 nm Pb-doped GaAs thin film was deposited on a glass substrate by means of the thermionic vacuum arc technique in 30 s using GaAs and Pb pellets as source materials. Tools and techniques such as an optical reflectometer, UV-VIS-NIR spectrophotometer, FESEM, EDX, AFM and optical tensiometer were employed to investigate the physical properties of the produced film. From the optical investigations, the refractive index at the wavelength of 632.8 nm and optical band gap of the film were found to be 4.03 and 1.13 eV respectively. It was observed that Pb doping increased the value of refractive index and decreased the band gap value. A uniform surface morphology with fine grain covering the entire surface was observed through the FESEM and AFM studies while 50–80 nm grain size and 2.22 nm root mean square roughness values were obtained. The EDX analysis confirmed the presence of Ga, As and Pb elements in the film. The wetting experiments revealed that the contact angle value was dependent on the liquid used. The surface free energy calculated with OWRK/Fowkes and Equation of State approaches were about 26 mN/m. © 2017 Elsevier B.V.en_US
dc.language.isoengen_US
dc.publisherElsevier Ltd
dc.relation.isversionof10.1016/j.jallcom.2017.05.297
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAFM
dc.subjectFESEM
dc.subjectPb-doped GaAs
dc.subjectSemiconductor
dc.subjectThin film
dc.subjectEnergy gap
dc.subjectEquations of state
dc.subjectFree energy
dc.subjectGallium arsenide
dc.subjectLead
dc.subjectPhysical properties
dc.subjectReflectometers
dc.subjectRefractive index
dc.subjectSemiconducting gallium
dc.subjectSemiconductor doping
dc.subjectSemiconductor materials
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectWetting
dc.subjectFESEM
dc.subjectGaAs
dc.subjectOptical investigation
dc.subjectOptical reflectometers
dc.subjectRoot mean square roughness
dc.subjectThermionic vacuum arc
dc.subjectTools and techniques
dc.subjectUV-VIS-NIR spectrophotometers
dc.subjectOptical films
dc.subjectAFM
dc.subjectFESEM
dc.subjectPb-doped GaAs
dc.subjectSemiconductor
dc.subjectThin film
dc.subjectEnergy gap
dc.subjectEquations of state
dc.subjectFree energy
dc.subjectGallium arsenide
dc.subjectLead
dc.subjectPhysical properties
dc.subjectReflectometers
dc.subjectRefractive index
dc.subjectSemiconducting gallium
dc.subjectSemiconductor doping
dc.subjectSemiconductor materials
dc.subjectSubstrates
dc.subjectThin films
dc.subjectVacuum applications
dc.subjectVacuum technology
dc.subjectWetting
dc.subjectFESEM
dc.subjectGaAs
dc.subjectOptical investigation
dc.subjectOptical reflectometers
dc.subjectRoot mean square roughness
dc.subjectThermionic vacuum arc
dc.subjectTools and techniques
dc.subjectUV-VIS-NIR spectrophotometers
dc.subjectOptical films
dc.titleA study on some physical properties of a Pb-doped GaAs thin film produced by thermionic vacuum arcen_US
dc.typearticleen_US
dc.relation.journalJournal of Alloys and Compoundsen_US
dc.contributor.departmentBayburt Universityen_US
dc.contributor.authorID55897416100
dc.contributor.authorID55897767500
dc.contributor.authorID9274843500
dc.contributor.authorID7003415405
dc.identifier.volume720
dc.identifier.startpage383
dc.identifier.endpage387
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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