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Öğe Influence of oxygen partial pressure on the metastable copper oxide thin films(World Scientific Publishing Co. Pte Ltd, 2016) Geçici B.; Korkmaz S.; Özen S.; Šenay V.; Pat S.Paramelaconite (Cu4O3) is a metastable copper oxide. Metastable copper oxide thin films were deposited on glass substrates by reactive RF magnetron sputtering in argon (Ar) and oxygen (O2) gas mixture atmospheres. Ar/O2 gas ratios in the sputtering ambient were chosen as 1/1 and 1/9. The surface and optical properties were determined by X-ray diffractometer (XRD), atomic force microscope (AFM) and UV-Vis spectrophotometer. The XRD patterns of the samples exhibited single strong diffraction peaks at 35.39° and 35.49° , corresponding to the (202) peak of Cu4O3. The mean thickness values were measured as 100 nm and 80 nm for the films deposited at 1/1 and 1/9 Ar/O2 gas ratios, respectively. The samples showed low transmittance and high absorbance in the high frequency region. © 2016 World Scientific Publishing Company.Öğe Influence of RF power on optical and surface properties of the ZnO thin films deposited by magnetron sputtering(American Scientific Publishers, 2015) Pat S.; Şenay V.; Özen S.; Korkmaz S.; Geçici B.The influences of the effects of sputtering power on the optical and structural properties of ZnO thin films were investigated. The ZnO layers were deposited on glass slides by RF magnetron sputtering. RF sputtering powers were adjust to 150 W and 250 W. Optical analysis and tools and methods were used for the comparison of the optical and surface properties. The results show that sputtering powers have affected the optical and surface properties. The band gap variations of ZnO thin films are observed. The samples are transparent. The roughness values of sample grown at 250 W are increased threefold in comparison with sample grown at 150 W while RF power is increased. Furthermore, surface contact angle was decreased to one-half of its values obtained at low RF power. This value is close to theoretical limit of contact angle. Obtained results show that surface properties of the layers can changed by RF power, but optical properties are slightly different. Copyright © 2015 American Scientific Publishers All rights reserved.Öğe Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates(Institute of Physics Publishing, 2016) Ozen S.; Senay V.; Pat S.; Korkmaz S.The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, X-ray diffraction device, spectroscopic ellipsometer and energy dispersive X-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications. © 2016 IOP Publishing Ltd.
