Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Institute of Physics Publishing
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, X-ray diffraction device, spectroscopic ellipsometer and energy dispersive X-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications. © 2016 IOP Publishing Ltd.
Açıklama
Anahtar Kelimeler
Atomic force microscopy (AFM), GaN, Image analysis, Optical properties, Surface analysis, TVA, Atomic force microscopy (AFM), GaN, Image analysis, Optical properties, Surface analysis, TVA
Kaynak
Materials Research Express
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
3
Sayı
4
