Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates

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dc.authorid55897767500
dc.authorid55897416100
dc.authorid9274843500
dc.authorid7003415405
dc.contributor.authorOzen S.
dc.contributor.authorSenay V.
dc.contributor.authorPat S.
dc.contributor.authorKorkmaz S.
dc.date.accessioned20.04.201910:49:12
dc.date.accessioned2019-04-20T21:43:38Z
dc.date.available20.04.201910:49:12
dc.date.available2019-04-20T21:43:38Z
dc.date.issued2016
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThe aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, X-ray diffraction device, spectroscopic ellipsometer and energy dispersive X-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications. © 2016 IOP Publishing Ltd.en_US
dc.identifier.doi10.1088/2053-1591/3/4/045012
dc.identifier.issn2053-1591
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84965043964en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://dx.doi.org/10.1088/2053-1591/3/4/045012
dc.identifier.urihttps://hdl.handle.net/20.500.12403/626
dc.identifier.volume3
dc.identifier.wosWOS:000377811500013en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherInstitute of Physics Publishing
dc.relation.ispartofMaterials Research Expressen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAtomic force microscopy (AFM)
dc.subjectGaN
dc.subjectImage analysis
dc.subjectOptical properties
dc.subjectSurface analysis
dc.subjectTVA
dc.subjectAtomic force microscopy (AFM)
dc.subjectGaN
dc.subjectImage analysis
dc.subjectOptical properties
dc.subjectSurface analysis
dc.subjectTVA
dc.titleMorphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substratesen_US
dc.typeArticleen_US

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