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Öğe The Al doping effect on the surface, optical, electrical and nanomechanical properties of the ZnO and AZO thin films prepared by RF sputtering technique(Elsevier Ltd, 2017) Pat S.; Mohammadigharehbagh R.; Özen S.; Şenay V.; Yudar H.H.; Korkmaz Ş.In this study, ZnO and aluminum doped ZnO (AZO) thin films were deposited at constant RF power of 100 W for the determine of the structural, surface, optical, electrical and nanomechanical properties. X–Ray diffraction (XRD), atomic force microscopy (AFM), nanoindentation technique and UV–Vis spectrophotometer were used. ZnO (100) and ZnO (004) orientations were detected in the ZnO and AZO films. The crystallite size values for the films were calculated as to be as 35 nm and 20 nm for ZnO and AZO thin films, respectively. It was found that the roughness values decreased to 3.15 nm from 5.15 nm for AZO and ZnO films, respectively. The hardness values of the ZnO and AZO thin films are measured as 7 GPa and 11 GPa. Young's modulus values were determined as 155 GPa and 95 GPa for ZnO and AZO films, respectively. The ZnO and AZO thin films have high transparency. © 2017 Elsevier LtdÖğe Impedance analysis of nano thickness layered AlGaN acoustic sensor deposited by thermionic vacuum arc(American Institute of Physics Inc., 2016) Özen S.; Bilgiç E.; Gülmez G.; Şenay V.; Pat S.; Korkmaz Ş.; Mohammadigharehbagh R.In this study, AlGaN acoustic sensor was deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method for the first time. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. The thickness of the acoustic sensor is in deposited as nano layer. Impedance analyses were realized. Also, TVA production parameters and some properties of the deposited layers were investigated. TVA is a fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results show that AlGaN materials are very promising materials. Moreover, these acoustic sensors have been produced by TVA technology. © 2016 AIP Publishing LLC.Öğe Investigation of the thickness effect to impedance analysis results AlGaN acoustic sensor(American Institute of Physics Inc., 2016) Özen S.; Bilgiç E.; Gülmez G.; Şenay V.; Pat S.; Korkmaz Ş.; Mohammadigharehbagh R.In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production. © 2016 AIP Publishing LLC.Öğe Investigation on the physical properties of C-doped ZnO thin films deposited by the thermionic vacuum arc(Springer Verlag, 2017) Mohammadigharehbagh R.; Özen S.; Hakan Yudar H.; Şenay V.; Pat S.; Korkmaz Ş.The aim of this study is to determine some physical properties of C-doped ZnO coated on a glass substrate by using the thermionic vacuum arc method. The produced C-doped ZnO thin film is characterized by using several analysis techniques. The produced thin film has a cubic crystal structure, high transmittance in the visible region, symmetrical surface distribution, and optical band gap energy of 3.34 eV. According to the XRD analysis of the produced thin film, it is a fullerene (C60)-doped polycrystalline ZnO. Hardness value and Young's modulus value were determined as 8 GPa and 140 GPa, respectively. These physical properties are adequate for future transparent electrode applications. © 2017, Società Italiana di Fisica and Springer-Verlag Berlin Heidelberg.Öğe Morphology, composition, structure and optical properties of CuO/Cu2O thin films prepared by RF sputtering method(Elsevier Ltd, 2016) Korkmaz Ş.; Geçici B.; Korkmaz S.D.; Mohammadigharehbagh R.; Pat S.; Özen S.; Şenay V.; Yudar H.H.In this paper, copper oxide (CuO/Cu2O) nanocrystalline thin films were deposited by radio frequency (RF) magnetron sputtering system at 75 W and 100 W. The surface, optical, composition and structural properties of obtaining samples were characterized by using atomic force microscopy (AFM), UV–Vis spectrophotometer, field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The optical band gaps of produced films were calculated as 2.05 eV and 1.83 eV for 75 W and 100 W. The layer's thicknesses were measured as 20 nm and 50 nm using a Filmetrics F20. FESEM images of the samples prove the AFM images change and also show homogeneity of thin films and variation relative to power change, thus revealed the surface of samples disturb in homogen mode. EDX results denote presence of Cu and O elements inside the deposited samples. © 2016Öğe Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc(American Institute of Physics Inc., 2016) Şenay V.; Özen S.; Pat S.; Korkmaz Ş.; Mohammadigharehbagh R.Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (?h?)2 vs. h?. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively. © 2016 AIP Publishing LLC.
