Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc
Küçük Resim Yok
Tarih
2016
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
American Institute of Physics Inc.
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (?h?)2 vs. h?. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively. © 2016 AIP Publishing LLC.
Açıklama
9th International Physics Conference of the Balkan Physical Union, BPU 2015
Anahtar Kelimeler
GaAs thin films, optical properties, surface properties, Thermionic vacuum arc, GaAs thin films, optical properties, surface properties, Thermionic vacuum arc
Kaynak
AIP Conference Proceedings
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
1722
