Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc

Küçük Resim Yok

Tarih

2016

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

American Institute of Physics Inc.

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (?h?)2 vs. h?. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively. © 2016 AIP Publishing LLC.

Açıklama

9th International Physics Conference of the Balkan Physical Union, BPU 2015

Anahtar Kelimeler

GaAs thin films, optical properties, surface properties, Thermionic vacuum arc, GaAs thin films, optical properties, surface properties, Thermionic vacuum arc

Kaynak

AIP Conference Proceedings

WoS Q Değeri

N/A

Scopus Q Değeri

N/A

Cilt

1722

Sayı

Künye