Gamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diode

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dc.authoridbilge ocak, sema/0000-0002-0590-7555
dc.authoridOrhan, Elif/0000-0002-3949-6141
dc.contributor.authorKutluoglu, Esra Efil
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorBayram, Ozkan
dc.contributor.authorOcak, Sema Bilge
dc.date.accessioned2024-10-04T18:51:02Z
dc.date.available2024-10-04T18:51:02Z
dc.date.issued2021
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThe purpose of this study is to determine the effects of gamma (gamma)-ray irradiation on capacitance and conductance features of Al/Graphene/Al2O3/p-Si structure. Graphene has been grown on copper foil by the Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by the wet transfer method. After Al/Graphene/Al2O3/p-Si structure has been exposed to 30 kGy and 60 kGy gamma-ray irradiation, capacitance, and conductance measurements have been accomplished at 300 K. Electrical parameters have been compared before and after gamma-ray irradiation for 50 kHz and 500 kHz. These results have been confirmed that capacitance and conductance values have increased after gamma-ray irradiation and, have decreased when the radiation dose was increased from 30 kGy to 60 kGy. It has been observed that series resistance has decreased after 30 kGy radiation dose and has increased with increasing radiation dose.en_US
dc.description.sponsorshipResearch Fund of Gazi University [BAP-18/2015-03, BAP-05/2020-13]en_US
dc.description.sponsorshipThe authors thankfully acknowledge the financial support of the Research Fund of Gazi University (Project numbers: BAP-18/2015-03 and BAP-05/2020-13). The authors would like to thank the Gazi University optic Research Lab. and Gazi University Sensor Devices Research Lab.en_US
dc.identifier.doi10.1016/j.physb.2021.413306
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85112127767en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2021.413306
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3346
dc.identifier.volume621en_US
dc.identifier.wosWOS:000697097700007en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectCVDen_US
dc.subjectGamma-ray irradiationen_US
dc.subjectInterface statesen_US
dc.subjectCapacitanceen_US
dc.subjectConductanceen_US
dc.titleGamma-ray irradiation effects on capacitance and conductance of graphene-based Schottky diodeen_US
dc.typeArticleen_US

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