Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer New York LLC
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by means of the TVA technique in a very short period of time (70 s) and it’s morphological, compositional, and optical properties were examined. The deposited GaAs:Sn structures were characterized via both atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). In this context, current research aims to reach a conclusion about the structure of the produced GaAs:Sn film by combining AFM, FESEM and energy dispersive X-ray spectroscopy data. From the optical investigation, the refractive index and extinction coefficient values for the produced film were obtained as 3.68 and 0.03 at the wavelength of 632.8 nm, respectively. The direct optical band gap energy of the deposited thin film was determined by two different models. Estimated optical band gap values were compared with each other. The results showed that TVA technique is suitable for a GaAs:Sn coating on glass substrate. © 2015, Springer Science+Business Media New York.
Açıklama
Anahtar Kelimeler
Atomic force microscopy, Energy dispersive spectroscopy, Energy gap, Gallium alloys, Gallium arsenide, Glass, Optical band gaps, Optical properties, Refractive index, Scanning electron microscopy, Semiconducting gallium, Substrates, Thin films, Vacuum applications, X ray spectroscopy, Energy dispersive X ray spectroscopy, Extinction coefficients, Field emission scanning electron microscopes, Glass substrates, Optical band gap energy, Optical investigation, Short periods, Thermionic vacuum arc, Tin, Atomic force microscopy, Energy dispersive spectroscopy, Energy gap, Gallium alloys, Gallium arsenide, Glass, Optical band gaps, Optical properties, Refractive index, Scanning electron microscopy, Semiconducting gallium, Substrates, Thin films, Vacuum applications, X ray spectroscopy, Energy dispersive X ray spectroscopy, Extinction coefficients, Field emission scanning electron microscopes, Glass substrates, Optical band gap energy, Optical investigation, Short periods, Thermionic vacuum arc, Tin
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
26
Sayı
11
