Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays
Küçük Resim Yok
Tarih
2025
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this study, a memristor structure known as a missing circuit element was produced. This study consists of a total of six samples in both thin film and device form with different arrays of BST film and CeO2 film on SiO2/Si substrate. The effects of different arrays and device forms of these two films on memristive behavior were investigated. It was observed that the structures exhibited memristive behavior due to the difference in ion mobility in films with different dielectric constants. It was also observed that the structures changed their memristive behavior in the annealing process performed at different temperatures. It was observed that the memristive behaviors examined imitated the connection strength of artificial synapses, and they are suitable for the production of multi-bit memristors or analog memristors suitable for the creation of artificial neuromorphic networks.
Açıklama
Anahtar Kelimeler
SYNAPTIC BEHAVIOR, LOGIC
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Cilt
36
Sayı
6
