Investigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays

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dc.authorid0000-0002-8636-5021
dc.contributor.authorAkin, Ozlem
dc.contributor.authorEfeoglu, Hasan
dc.date.accessioned2026-02-28T12:17:42Z
dc.date.available2026-02-28T12:17:42Z
dc.date.issued2025
dc.departmentBayburt Üniversitesi
dc.description.abstractIn this study, a memristor structure known as a missing circuit element was produced. This study consists of a total of six samples in both thin film and device form with different arrays of BST film and CeO2 film on SiO2/Si substrate. The effects of different arrays and device forms of these two films on memristive behavior were investigated. It was observed that the structures exhibited memristive behavior due to the difference in ion mobility in films with different dielectric constants. It was also observed that the structures changed their memristive behavior in the annealing process performed at different temperatures. It was observed that the memristive behaviors examined imitated the connection strength of artificial synapses, and they are suitable for the production of multi-bit memristors or analog memristors suitable for the creation of artificial neuromorphic networks.
dc.description.sponsorshipScientific and Technological Research Council of Turkiye (TUBITAK); Ataturk University, Scientific Research Projects Coordination [FDK-2022-10970]
dc.description.sponsorshipOpen access funding provided by the Scientific and Technological Research Council of Turkiye (TUBITAK). This work was supported by Ataturk University, Scientific Research Projects Coordination, under Grant No. FDK-2022-10970.
dc.identifier.doi10.1007/s10854-025-14460-4
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue6
dc.identifier.urihttps://doi.org/10.1007/s10854-025-14460-4
dc.identifier.urihttps://hdl.handle.net/20.500.12403/5933
dc.identifier.volume36
dc.identifier.wosWOS:001434802300002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science-Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_WoS_20260218
dc.subjectSYNAPTIC BEHAVIOR
dc.subjectLOGIC
dc.titleInvestigation of the memristive properties of the device form and thin film form of BST and CeO2 films with different arrays
dc.typeArticle

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