Some physical properties of nanostructured Al doped ZnO thin films synthesized by RF magnetron sputtering at room temperature

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dc.authoridSenay, Volkan/0000-0002-6579-2737
dc.contributor.authorSenay, Volkan
dc.date.accessioned2024-10-04T18:53:48Z
dc.date.available2024-10-04T18:53:48Z
dc.date.issued2019
dc.departmentBayburt Üniversitesien_US
dc.description.abstractIn this research, AZO thin films were deposited on glass substrates with 70W, 100W and 125W RF powers at room temperature by RF magnetron sputtering technique. The structural, optical and surface properties of the produced thin films were investigated. According to the obtained results, the investigated thin films had a crystalline structure and they showed high transparency in the visible region. The increase of RF power produced thicker films. Relatively thicker AZO films produced with higher RF power exhibited greater number of interference fringes in the reflectance and transmittance spectra. The refractive index values of the film produced with 125W RF power were considerably lower than those of the films produced with 70W and 100W due to the decreased packing density. The optical energy band gap values of the produced AZO thin films were higher than that of undoped ZnO films. This expansion resulted from the Burstein-Moss effect. However, the band gap energy value as well as the roughness of the film surface decreased like refractive index with an increase in RF power, especially after 100W. As a result, the values corresponding to the optical and surface properties can be tuned and AZO thin films can be produced by RF magnetron sputtering technique as promising candidates for optoelectronic devices and transparent conductive oxide applications.en_US
dc.identifier.doi10.1007/s10854-019-01329-6
dc.identifier.endpage9915en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue10en_US
dc.identifier.scopus2-s2.0-85064348022en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage9910en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-019-01329-6
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3693
dc.identifier.volume30en_US
dc.identifier.wosWOS:000468437800088en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOptical-Propertiesen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectMorphological Propertiesen_US
dc.subjectStructural-Propertiesen_US
dc.subjectAnnealing Treatmenten_US
dc.subjectThicknessen_US
dc.subjectTransparenten_US
dc.subjectPoweren_US
dc.subjectGaasen_US
dc.titleSome physical properties of nanostructured Al doped ZnO thin films synthesized by RF magnetron sputtering at room temperatureen_US
dc.typeArticleen_US

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