Temperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering technique

Basit Öğe Kaydı
dc.authoridGuzeldir, Betul/0000-0003-4480-0299
dc.contributor.authorBaltakesmez, A.
dc.contributor.authorTekmen, S.
dc.contributor.authorGuzeldir, B.
dc.date.accessioned2024-10-04T18:53:50Z
dc.date.available2024-10-04T18:53:50Z
dc.date.issued2020
dc.departmentBayburt Üniversitesien_US
dc.description.abstractIn this study, tungsten disulfide (WS2) and tungsten trioxide (WO3) thin films are deposited on n-Si by RF sputtering technique. The optical, morphological and structural characteristics of these films are investigated. The XRD patterns showed that highly crystallinity have been obtained with dominant characteristic diffraction peaks of the WS2 and WO3. The SEM images show that these films are nearly uniform and covered all surface of substrates. Furthermore, the WS2 film has two-dimensional (2D) vertical layers while the WO3 has threedimensional (3D) structure. From the XPS spectra, it revealed that the peaks confirmed the formation of WS2 and WO3 phases. The Raman spectra presented that different vibrational modes and phases are characteristics of the WS2 and WO3 thin films. Electrical properties of W/n-Si metal-semiconductor (MS) and W/WS2/n-Si and W/WO3/n-Si metal-interfacial layer-semiconductor (MIS) diodes are investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics at various temperatures. It was found that I-V and C-V characteristics are strongly dependent on temperature and the interfacial WS2 and WO3 layers are significant roles for the electrical properties of W/WS2/n-Si and W/WO3/n-Si devices.en_US
dc.identifier.doi10.1016/j.mssp.2020.105204
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.scopus2-s2.0-85085238462en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2020.105204
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3732
dc.identifier.volume118en_US
dc.identifier.wosWOS:000552273500004en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectTungsten disulfideen_US
dc.subjectTungsten trioxideen_US
dc.subjectRF Sputteringen_US
dc.subjectMetal-semiconductor structuresen_US
dc.subjectTemperatureen_US
dc.titleTemperature dependent current-and capacitance-voltage characteristics of W/n-Si structures with two-dimensional WS2 and three-dimensional WO3 interfaces deposited by RF sputtering techniqueen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu