Electrical properties of Graphene/Silicon structure with Al2O3 interlayer

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dc.authoridBAYRAM, Ozkan/0000-0002-0741-3129
dc.authoridOrhan, Elif/0000-0002-3949-6141
dc.contributor.authorKaymak, Nuriye
dc.contributor.authorBayram, Ozkan
dc.contributor.authorTataroglu, Adem
dc.contributor.authorOcak, Sema Bilge
dc.contributor.authorOrhan, Elif Oz
dc.date.accessioned2024-10-04T18:49:42Z
dc.date.available2024-10-04T18:49:42Z
dc.date.issued2020
dc.departmentBayburt Üniversitesien_US
dc.description.abstractThe electrical properties of the fabricated Al/Gr/Al2O3/p-Si structure have been analyzed using frequency-dependent capacitance/conductance-voltage (C/G-V) measurements. Graphene (Gr) nanosheets were grown on to copper (Cu) catalyst substrate, which has 99.99% purity, by Chemical Vapor Deposition (CVD) technique, and then the Graphene was transferred on -Al2O3/p-Si by the standard transfer process. The Graphene structures have been characterized by Raman Spectroscopy and Transmission Electron Microscopy (TEM) analyses, and the results of both analyses confirmed the monolayer/bilayer Graphene nanostructure. The forward and reverse bias G- V and C-V measurements of this structure have been performed in 10 kHz-400 kHz and at 300 K. The frequency dispersion in C and G can be evaluated for interface state density ( D it) and series resistance ( R s) values. The values of D it and R s are dependent on frequency and increase with decreasing frequency. The R s - V graph shows a peak form at all frequencies in the depletion region and vanishes with increasing frequency. The obtained results suggest that the prepared structure can be used in electronic device applications.en_US
dc.description.sponsorshipResearch Fund of Gazi University [BAP-18/2015-03, BAP-65/2019-01]en_US
dc.description.sponsorshipThe authors thankfully acknowledge the financial support by Research Fund of Gazi University (Project Numbers: BAP-18/2015-03 and BAP-65/2019-01). The authors would like to thank the Photonics Application and Research Center of Gazi University.en_US
dc.identifier.doi10.1007/s10854-020-03517-1
dc.identifier.endpage9725en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85084460956en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage9719en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03517-1
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3260
dc.identifier.volume31en_US
dc.identifier.wosWOS:000531767500001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectInterface-State Densityen_US
dc.subjectSeries Resistanceen_US
dc.subjectSurface-Statesen_US
dc.subjectHigh-Qualityen_US
dc.subjectFrequencyen_US
dc.subjectVoltageen_US
dc.subjectSheetsen_US
dc.subjectFilmsen_US
dc.titleElectrical properties of Graphene/Silicon structure with Al2O3 interlayeren_US
dc.typeArticleen_US

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