Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Basit Öğe Kaydı
dc.authoridGur, Emre/0000-0002-3606-2751
dc.contributor.authorBakacak, Pinar K.
dc.contributor.authorGur, Emre
dc.contributor.authorBayram, Ozkan
dc.contributor.authorTuzemen, Sebahattin
dc.contributor.authorSimsek, Onder
dc.date.accessioned2024-10-04T18:52:37Z
dc.date.available2024-10-04T18:52:37Z
dc.date.issued2021
dc.departmentBayburt Üniversitesien_US
dc.description.abstractIn this study, Zirconium Oxide (ZrO2) thin films were produced by using radio frequency magnetron sputtering method on glass substrate at various pressures. The effects of growth pressure on the characteristics of grown Zirconia nanostructures were investigated by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), Uv-Visible Spectroscopy and Photoluminescence Spectrometry (PL). XRD analysis showed that peaks of the monoclinic and tetragonal phases were more effective at low growth pressure, but different monoclinic phase peaks were present at increasing growth pressures. The surface morphological properties of the films such as average and maximum roughness, changed significantly with increasing growth pressure, and the maximum peak height first increased to 40 nm and then decreased to 20 nm. The optical transmittance of these thin films was examined in the 450-1100 nm wavelength range, covering both the visible and near-infrared spectral range, and it was found to be approximately 95% at 550 nm wavelength, and the optical band gaps were calculated to be approximately 3.26 eV by PL analyses. Uv-Visible spectroscopy analysis showed that the refractive index of the Zirconia films decreases from 2.09 to 1.79 with increasing wavelength of the incident photon. ZrO2 thin films are considered potential materials for transparent electronic devices because of their high transmittance value.en_US
dc.identifier.doi10.1007/s10854-021-05468-7
dc.identifier.endpage7549en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85102043611en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage7541en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-05468-7
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3590
dc.identifier.volume32en_US
dc.identifier.wosWOS:000625049500001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOptical-Propertiesen_US
dc.subjectNanostructuresen_US
dc.subjectDepositionen_US
dc.subjectSien_US
dc.titlePhotoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering techniqueen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu