Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode

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dc.authoridOrhan, Elif/0000-0002-3949-6141
dc.authoridTATAROGLU, ADEM/0000-0003-2074-574X
dc.contributor.authorKutluoglu, Esra Efil
dc.contributor.authorOrhan, Elif Oz
dc.contributor.authorTataroglu, Adem
dc.contributor.authorBayram, Ozkan
dc.date.accessioned2024-10-04T18:49:32Z
dc.date.available2024-10-04T18:49:32Z
dc.date.issued2021
dc.departmentBayburt Üniversitesien_US
dc.description.abstractResearches on layered materials such as graphene have attracted lots of attention recently. It has been shown that these materials have make a junction with many semiconductor materials that behave like Schottky diodes and have rectifying characteristics. The comprehension of its fabrication process and properties are a critical need toward graphene-based integrated electronics. The purpose of this study is to find out the current-voltage (I-V) performance of Bilayer Graphene (BLGr) based heterostructure fabricated on Al2O3/p-Si, and the effect of BLGr on diode parameters. Graphene has been grown on copper (Cu) foil by Chemical Vapor Deposition (CVD) method and transferred onto Al2O3/p-Si by using the polymethyl methacrylate (PMMA) wet transfer method. Raman analysis has been performed to obtain supportive information about CVD synthesized graphene film. The I-V plot of the diode exhibited two linear regions named Region 1 (0.08-0.19 V) and Region 2 (0.21-0.40 V). The double-exponential I-V behavior of the diode has been analyzed. The diode characteristics such as barrier height (phi(B0)), series resistance (R-s), and ideality factor (n) have been calculated by using thermionic emission (TE), Norde, and Cheung methods. Especially, the values of the barrier height were compared with one another. It was found that they are in good agreement. Additionally, current conduction mechanisms of the diode were investigated using the forward bias ln(I) versus ln (V) plot. At lower and higher forward bias regions, the conduction mechanisms were determined as ohmic behavior and trap charge limiting current mechanism (TCLC), respectively.en_US
dc.description.sponsorshipScientific Research Council (BAP) of Gazi University [18/2015-03, 05/2020-13]en_US
dc.description.sponsorshipThe authors gratefully acknowledge the Scientific Research Council (BAP) of Gazi University for the financial support of this research through project numbers 18/2015-03 and 05/2020-13. The authors would like to thank Gazi University Electro-optic Research Laboratory and Gazi University Photonics Application and Research Center.en_US
dc.identifier.doi10.1088/1402-4896/ac2af5
dc.identifier.issn0031-8949
dc.identifier.issn1402-4896
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-85118505470en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/1402-4896/ac2af5
dc.identifier.urihttp://hdl.handle.net/20.500.12403/3199
dc.identifier.volume96en_US
dc.identifier.wosWOS:000707211300001en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofPhysica Scriptaen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjecttwo dimensional (2D) materialsen_US
dc.subjectbilayer grapheneen_US
dc.subjectSchottky diodeen_US
dc.subjectdouble-exponential modelen_US
dc.subjectideality factoren_US
dc.subjectbarrier heighten_US
dc.titleDouble-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diodeen_US
dc.typeArticleen_US

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